DescriptionThe IMX385LQR-C is a diagonal 8.35 mm (Type 1/2) CMOS active pixel type solid-state image sensor with a squarepixel array and 2.13 M effective pixels. This chip operates with analog 3.3 V, digital 1.2 V, and interface 1.8 V triplepower supply, and has low power consumption. High sensitivity, low dark current and no smear are achieved throughthe adoption of R, G and B primary color mosaic filters. This chip features an electronic shutter with variablecharge-integration time.(Applications: Surveillance cameras)
标签： CMOS传感器 IMX385LQR-C
上传时间： 2022-06-18
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sony CMOS传感器datasheet，IMX178LQJ-C_Data_SheetDescriptionThe IMX178LQJ-C is a diagonal 8.92 mm (Type 1/1.8) CMOS active pixel type image sensor with a square pixelarray and 6.44 M effective pixels. This chip operates with analog 2.9 V, digital 1.2 V and interface 1.8 V triple powersupply, and has low power consumption.High sensitivity, low dark current and no smear are achieved through the adoption of R, G and B primary colormosaic filters.This chip features an electronic shutter with variable charge-integration time.(Applications: Surveillance cameras, FA cameras, Industrial cameras)
标签： CMOS传感器 IMX178LQJ-C
上传时间： 2022-06-18
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le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
标签： igbt
上传时间： 2022-06-20
上传用户：wangshoupeng199
摘要：本文在分析1GBT的动态开关特性和过流状态下的电气特性的基础上，通过对常规的IGBT推挽驱动电路进行改进，得到了具有良好过流保护特性的IGBT驱动电路。该电路简单，可靠，易用，配合DSP等控制芯片能达到很好的驱动效果Abstract：Based on the studies on the dynamic switching and over-current characteristics of IGBT，this paper makes some improvments to the original push-pull driving circuit，obtains a new IGBT driving circuit which has a good over-current protection function.The circuit is simple，reliable and easy to use.Combined with controlling chips such as DSP it will do a great job in driving applications.关键词：IBGT：开关特性；驱动；过流保护；Key Words:IGBT；switching characteristics；driving:over-current protection
上传时间： 2022-06-21
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文章首先阐述了整个方案的工作原理，给出LDO设计的指标要求；其次，依据系统方案的指标要求和制造1艺约束，实现包含误差放大器、基准源和保护电路等了模块在内的电压调整器：此外，文章还着重探讨了“如何利用放大器驱动100pF数量级的大电容负载"的问题；最后，给出整个模块总体电路的仿真验证结果。LDO的架构分析和设计以及基准源的设计是本文的核心内容。在LDO架构设计部分，文章基于对三种不同LDO拓扑的分析，选择并实现了含缓冲器级的LDO./设计中通过改进反馈网络，采用反馈电容，实现对LDO的环路补偿。同时，为提高误差放大器驱动功率管的能力、适应LDO低功耗发展的需求，文章探讨了如何使用放大器驱动大负载电容的问题，基于密勒定理和根轨迹原理，本文通过研究密勒电容的作用，采用MPC（Miller-Path-Compersation）结构，实践了两级放大器驱动大负载电容的方案，并把MPC补偿技术推广到三级放大器的设计中。文章设计的CRF（CRF：Current Re ference controlled by Feedback）电流基准是基于对传统自启动基准电流源的改进实现的。CRF基准电流源架构中存在一条阻性的电流道路，确保其在加载电源电压的过程中能够实现快速启动，响应速度达到1ps：而传统自启动基准电流源在相同的设计参数下，响应速度长达120us.CRF基准电流源突破了响应速度对其应用的限制。
上传时间： 2022-06-23
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开关升压型锂电池充电管理芯片FLD5302/3概述 为开关型两节或三节锂离子/锂 聚合物电池充电管理芯片，非常适合于便携 式设备的充电管理应用。 集电压和电 流调节器、预充、充电状态指示和充电截止 适配器自适应等功能于一体，采用 SOP-8 封装。 对电池充电分为三个阶段：预 充（ Pre-charge ）、恒流（CC/Constant Current）、恒压（CV/Constant Voltage）过程。 集成过压及过流保护，确保电芯的 安全。
上传时间： 2022-06-25
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本应用笔记介绍一种采用dsPIC数字信号控制器（Digital Signal Controller，DSC）或PIC24单片机来实现无刷直流（Brushless Direct Current，BLDC）电机无传感器控制的算法。该算法利用对反电动势（Back-Electromotive Force，BEMF）进行数字滤波的择多函数来实现。通过对电机的每一相进行滤波来确定电机驱动电压换相的时刻。这一控制技术省却了分立的低通滤波硬件和片外比较器。需指出，这里论述的所有内容及应用软件，都是假定使用三相电机。该电机控制算法包括四个主要部分：·利用DSC或单片机的模数转换器（Analog-to-Digital Converter，ADC）来采样梯形波BEMF信号·PWM导通侧ADC采样，以降低噪声并解决低电感问题·将梯形波BEMF信号与VBUS/2进行比较，以检测过零点·用择多函数滤波器对比较结果信号进行滤波·以三种不同模式对电机驱动电压进行换相：-传统开环控制器·传统闭环控制器比例-积分（Proportional-Integral，Pl）闭环控制器
标签： BLDC
上传时间： 2022-07-01
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The GD32F103xx device is a 32-bit general-purpose microcontroller based on the ARM?Cortex?-M3 RISC core with best ratio in terms of processing power, reduced power consumption and peripheral set. The Cortex?-M3 is a next generation processor core whichis tightly coupled with a Nested Vectored Interrupt Controller (NVIC), SysTick timer and advanced debug support.The GD32F103xx device incorporates the ARM ' Cortex?-M3 32-bit processor core operating at 108 MHz frequency with Flash accesses zero wait states to obtain maximumefficiency. It provides up to 3 MB on-chip Flash memory and up to 96 KB SRAM memory. An extensive range of enhanced I/Os and peripherals connected to two APB buses. The devices offer up to three 12-bit ADCs, up to two 12-bit DACs, up to ten general-purpose
标签： gd32f103
上传时间： 2022-07-23
上传用户：aben
Single-Channel, Serial Input, 4 mA to20 mA, Current Source DAC, HART Connectivity
上传时间： 2022-07-24
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STM32F驱动L6470 ■ Operating voltage: 8 - 45 V■ 7.0 A out peak current (3.0 A r.m.s.)■ Low RDS(on) Power MOSFETs■ Programmable speed profile and positioning■ Programmable power MOS slew rate■ Up to 1/128 microstepping■ Sensorless stall detection■ SPI interface■ Low quiescent and standby currents■ Programmable non-dissipative overcurrentprotection on high and low-side■ Two levels of overtemperature protection
标签： l6470
上传时间： 2022-07-25
上传用户：kingwide
