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Voltage-sourced

  • Dual USB High-Side Power Switch

    The SP2526A device is a dual +3.0V to +5.5V USB Supervisory Power Control Switch ideal for self-powered and bus-powered Universal Serial Bus (USB) applications. Each switch has low on-resistance (110mΩ typical) and can supply 500mA minimum. The fault currents are limited to 1.0A typical and the flag output pin for each switch is available to indicate fault conditions to the USB controller. The thermal shutdown feature will prevent damage to the device when subjected to excessive current loads. The undervoltage lockout feature will ensure that the device will remain off unless there is a valid input voltage present.

    标签: High-Side Switch Power Dual USB

    上传时间: 2019-03-06

    上传用户:bhitr

  • L9945

    AEC-Q100 qualified • 12 V and 24 V battery systems compliance • 3.3 V and 5 V logic compatible I/O • 8-channel configurable MOSFET pre-driver – High-side (N-channel and P-channel MOS) – Low-side (N-channel MOS) – H-bridge (up to 2 H-bridge) – Peak & Hold (2 loads) • Operating battery supply voltage 3.8 V to 36 V • Operating VDD supply voltage 4.5 V to 5.5 V • All device pins, except the ground pins, withstand at least 40 V • Programmable gate charge/discharge currents for improving EMI behavior

    标签: configurable Automotive pre-driver suitable channel systems MOSFET fully High side

    上传时间: 2019-03-27

    上传用户:guaixiaolong

  • AZ1117H

    The AZ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The AZ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within 1% for 1.5V, 1.8V, 2.5V, 2.85V, 3.3V, 5.0V and adjustable versions or 2% for 1.2V version. Current limit is trimmed to ensure specified output current and controlled short-circuit current. On-chip thermal shutdown provides protection against any combination of overload and ambient temperature that would create excessive junction temperature.  The AZ1117 has an adjustable version, that can provide the output voltage from 1.25V to 12V with only 2 external resistors.

    标签: 1117H 1117 AZ

    上传时间: 2019-04-11

    上传用户:heaven0o0o0

  • Texas Instruments常用元件库

    Texas Instruments常用元件库 TI Analog Timer Circuit.IntLib TI Logic Flip-Flop.IntLib TI Logic Gate 1.IntLib TI Logic Gate 2.IntLib TI Logic Latch.IntLib TI Logic Switch.IntLib TI Power Mgt Voltage Reference.IntLib TI Power Mgt Voltage Regulator.IntLib Texas Instruments Footprints.PcbLib等等

    标签: Instruments Texas常用元件库 Altium Designer TI

    上传时间: 2019-11-28

    上传用户:blue sky

  • P80C31SBPN

    80C51 8-bit microcontroller family 4K/128 OTP/ROM/ROMless, low voltage (2.7V–5.5V), low power, high speed (33 MHz)

    标签: P80C31SBPN datasheet

    上传时间: 2019-11-28

    上传用户:blue sky

  • AD826

    High-Speed, Low-Power Dual Operational Amplifier The AD826 features high output current drive capability of 50 mA min per amp, and is able to drive unlimited capacitive loads. With a low power supply current of 15 mA max for both amplifiers, the AD826 is a true general purpose operational amplifier. The AD826 is ideal for power sensitive applications such as video cameras and portable instrumentation. The AD826 can operate from a single +5 V supply, while still achieving 25 MHz of band width. Furthermore the AD826 is fully specified from a single +5 V to ±15 V power supplies. The AD826 excels as an ADC/DAC buffer or active filter in data acquisition systems and achieves a settling time of 70 ns to 0.01%, with a low input offset voltage of 2 mV max. The AD826 is available in small 8-lead plastic mini-DIP and SO packages.

    标签: 826 AD

    上传时间: 2020-04-19

    上传用户:su1254

  • Wireless+Communication+Circuits+and+Systems

    This book is concerned with integrated circuits and systems for wireless and mobile communications. Circuit techniques and implementation of reconfigurable low-voltage and low-power single-chip CMOS transceivers for multiband and multi- mode universal wireless communications are the focus of the book. Applications encompass both long-range mobile cellular communications (GSM and UMTS) and short-range wireless LANs (IEEE802.11 and Bluetooth). Recent advances in research into transceiver architecture, RF frontend, analogue baseband, RF CAD and automatic testing are reported. 

    标签: Communication Wireless Circuits Systems and

    上传时间: 2020-06-01

    上传用户:shancjb

  • Electromagnetic+Transients+in+Power+Cables

    For more than a century, overhead lines have been the most commonly used technology for transmitting electrical energy at all voltage levels, especially on the highest levels. However, in recent years, an increase in both the number and length of HVAC cables in the transmission networks of different countries like Denmark, Japan or United Kingdom has been observed. At the same time, the construction of offshore wind farms, which are typically connected to the shore through HVAC cables, increased exponentially.

    标签: Electromagnetic Transients Cables Power in

    上传时间: 2020-06-07

    上传用户:shancjb

  • GaN-on-Si+Displace+Si+and+SiC

    GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.

    标签: GaN-on-Si Displace and SiC Si

    上传时间: 2020-06-07

    上传用户:shancjb

  • Power Electronics Handbook, 3 Edition

    There have been many developments in the field of power electronics since the  publication of  the  second edition, almost  five  years  ago. Devices have become  bigger and better  -  bigger silicon die, and current and voltage ratings. However, semiconductor devices have also  become  smaller and better, integrated circuit devices, that is. And  the  marriage of low power integrated circuit tecnology and high power semiconductors has resulted in benefit to both fields.

    标签: Electronics Handbook Edition Power

    上传时间: 2020-06-07

    上传用户:shancjb