matlab有限元网格划分程序 DistMesh is a simple MATLAB code for generation of unstructured triangular and tetrahedral meshes. It was developed by Per-Olof Persson (now at UC Berkeley) and Gilbert Strang in the Department of Mathematics at MIT. A detailed description of the program is provided in our SIAM Review paper, see documentation below. One reason that the code is short and simple is that the geometries are specified by Signed Distance Functions. These give the shortest distance from any point in space to the boundary of the domain. The sign is negative inside the region and positive outside. A simple example is the unit circle in 2-D, which has the distance function d=r-1, where r is the distance from the origin. For more complicated geometries the distance function can be computed by interpolation between values on a grid, a common representation for level set methods. For the actual mesh generation, DistMesh uses the Delaunay triangulation routine in MATLAB and tries to optimize the node locations by a force-based smoothing procedure. The topology is regularly updated by Delaunay. The boundary points are only allowed to move tangentially to the boundary by projections using the distance function. This iterative procedure typically results in very well-shaped meshes. Our aim with this code is simplicity, so that everyone can understand the code and modify it according to their needs. The code is not entirely robust (that is, it might not terminate and return a well-shaped mesh), and it is relatively slow. However, our current research shows that these issues can be resolved in an optimized C++ code, and we believe our simple MATLAB code is important for demonstration of the underlying principles. To use the code, simply download it from below and run it from MATLAB. For a quick demonstration, type "meshdemo2d" or "meshdemond". For more details see the documentation.
标签： matlab有限元网格划分程序
上传时间： 2015-08-12
上传用户：凛风拂衣袖
建立了一个用于求解sigma的核函数矩阵，全部的测试数据点为一行数据，This matrix should be positive definite if the kernel function
标签： 核函数
上传时间： 2016-04-01
上传用户：guokai626
This book was born from the perception that there is much more to spectrum use and sharing than one sees reflected in publications, whether academic, commercial or political. the former – in good research style – tend towards reductionism and concentrate on specific, detailed aspects. commercial publications tend to empha- size the positive aspects and they tend to put promise above practice. Given the ever increasing pace of technology development and recent successes of new wireless technologies, some pundits predict large-scale spectrum scarcity, potentially lead- ing to economic catastrophe. Although economic theory has a hard time explaining recent events that shook the world economy, the notion of spectrum scarcity is intui- tively acceptable, even if not correct or immediately relevant.
上传时间： 2020-06-01
上传用户：shancjb
为适应双向DC/DC功率变换的电流采样需求,一种高精度高边电流采样电路被提出。其基本思想是在功率电路的高边串入采样电阻,借助电流镜原理并引入偏置电流电路,将双向电流均转换为正向电压输出。通过理论分析与仿真结合的方法对电流镜采样原理及4种不同的偏置电流电路方案进行对比,最后通过实验数据验证了高精度高边电流采样电路的有效性。实验数据表明,该采样电路可在-25~75℃的温度工作范围内,针对-10~＋10 A范围内的电流采样实现优于5%的采样精度。Current sensing plays an important role in controlling,monitoring or protection functions of power systems.To meet the current sensing requirement of bidirectional DC/DC converters,a high-accuracy bidirectional current sensing circuit is proposed.The proposed current sensing circuit inserts a resistor in the path of the current to be sensed,while the current mirror and biased current circuit are introduced.Therefore,the bidirectional current can be expressed by positive voltage.By theoretical analysis and simulation,the sampling theory is analyzed and four biased current circuits are compared.At last,experimental results verified the proposed method.It is demonstrated that the proposed current sensing circuit can achi...
上传时间： 2022-04-22
上传用户：
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
标签： igbt
上传时间： 2022-06-20
上传用户：wangshoupeng199
