虫虫首页| 资源下载| 资源专辑| 精品软件
登录| 注册

devices

  • ESD-Phenomena-and-the-Reliability

    As we enter the next millennium, there are clear technological patterns. First, the electronic industry continues to scale microelectronic structures to achieve faster devices, new devices, or more per unit area. Secondly, electrostatic charge, electrostatic discharge (ESD), electrical overstress (EOS) and electromagnetic emissions (EMI) continue to be a threat to these scaled structures. This dichotomy presents a dilemma for the scaling of semiconductor technologies and a future threat to new technologies. Technological advancements, material changes, design techniques, and simulation can fend off this growing concern – but to maintain this ever-threatening challenge, one must continue to establish research and education in this issue. 

    标签: ESD-Phenomena-and-the-Reliability

    上传时间: 2020-06-05

    上传用户:shancjb

  • Chemical mechanical polishing

    The planarization technology of Chemical-Mechanical-Polishing (CMP), used for the manufacturing of multi- level metal interconnects for high-density Integrated Circuits (IC), is also readily adaptable as an enabling technology in MicroElectroMechanical Systems (MEMS) fabrication, particularly polysilicon surface micromachining. CMP not only eases the design and manufacturability of MEMS devices by eliminating several photolithographic and film issues generated by severe topography, but also enables far greater flexibility with process complexity and associated designs. T

    标签: mechanical polishing Chemical

    上传时间: 2020-06-06

    上传用户:shancjb

  • CMOS MEMS_ A KEY TECHNOLOGY

    The mature CMOS fabrication processes are available in many IC foundries. It is cost-effective to leverage the existing CMOS fabrication technologies to implement MEMS devices. On the other hand, the MEMS devices could also add values to the IC industry as the Moore’s law reaching its limit. The CMOS MEMS could play a key role to bridge the gap between the CMOS and MEMS technologies. The CMOS MEMS also offers the advantage of monolithic integration of ICs and micro mechanical components. 

    标签: TECHNOLOGY CMOS MEMS KEY

    上传时间: 2020-06-06

    上传用户:shancjb

  • Frequency+Tunable+MEMS

    For more than three decades, Micro Electro Mechanical Systems (MEMS) have steadily transitioned out of research labs and into production forming a more than $10 billion market [1]. MEMS devices such as accelerometers, pressure sensors and microphones, to name a few, have seen immense utilization, particularly in the consumer electronics market, because of their compact sizes and minute power consumptions. In addition, these devices benefit from batch fabrication, which has enabled year-over-year reductions in cost [2]. In recent years,

    标签: Frequency Tunable MEMS

    上传时间: 2020-06-06

    上传用户:shancjb

  • MEMS and Nanotechnology-Based Sensors

    Recent advancements in nanotechnology (NT) materials and growth of micro/ nanotechnology have opened the door for potential applications of microelectro- mechanical systems (MEMS)- and NT-based sensors and devices. Such sensors and devices are best suited for communications, medical diagnosis, commercial, military, aerospace, and satellite applications. This book comes at a time when the future and well-being of Western industrial nations in the twenty-first century’s global eco- nomy increasingly depend on the quality and depth of the technological innovations they can commercialize at a rapid pace.

    标签: MEMS

    上传时间: 2020-06-06

    上传用户:shancjb

  • MEMS+Lorentz+Force+Magnetometers

    Nowadays sensors are part of everyday life in a wide variety of fields: scientific applications, medical instrumentation, industrial field, ...and, last but not least, popular mass production and low-cost goods, like smartphones and other mobile devices. Markets and business behind the field of sensors are quite impressive. A common trend for consumer applications is miniaturization which requires, on one side, a lot of research, development efforts, and resources but, on the other hand, allows costs and final application size reduction. In this scenario scientific community and industries are very active to drive innovation.

    标签: Magnetometers Lorentz Force MEMS

    上传时间: 2020-06-06

    上传用户:shancjb

  • MEMS-based+Circuits+and+Systems

    Over many years, RF-MEMS have been a hot topic in research at the technology and device level. In particular, various kinds of mechanical Si-MEMS resonators and piezoelectric BAW (bulk acoustic wave) resonators have been developed. The BAW technology has made its way to commercial products for passive RF filters, in particular for duplexers in RF transceiver front ends for cellular communica- tions. Beyond their use in filters, micromachined resonators can also be used in conjunction with active devices in innovative circuits and architectures.

    标签: MEMS-based Circuits Systems and

    上传时间: 2020-06-06

    上传用户:shancjb

  • Microengineering, MEMS, and Interfacing

    Microengineering and Microelectromechanical systems (MEMS) have very few watertight definitions regarding their subjects and technologies. Microengineering can be described as the techniques, technologies, and practices involved in the realization of structures and devices with dimensions on the order of micrometers. MEMS often refer to mechanical devices with dimensions on the order of micrometers fabricated using techniques originating in the integrated circuit (IC) industry, with emphasis on silicon-based structures and integrated microelectronic circuitry. However, the term is now used to refer to a much wider range of microengineered devices and technologies.

    标签: Microengineering Interfacing MEMS and

    上传时间: 2020-06-06

    上传用户:shancjb

  • GaN-on-Si+Displace+Si+and+SiC

    GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.

    标签: GaN-on-Si Displace and SiC Si

    上传时间: 2020-06-07

    上传用户:shancjb

  • NIST Framework and Roadmap

    Under the Energy Independence and Security Act of 2007 (EISA), the National Institute of Standards and Technology (NIST) was assigned “primary responsibility to coordinate development of a framework that includes protocols and model standards for information management to achieve interoperability of Smart Grid devices and systems…” [EISA Section 1305]. 35 This responsibility comes at a time when the electric power grid and electric power industry are undergoing the most dramatic transformation in many decades. Very significant investments are being made by industry and the federal government to modernize the power grid. To realize the full benefits of these investments—and the continued investments forecast for the coming decades—there is a continued need to establish effective smart grid 36 standards and protocols for interoperability.

    标签: Framework Roadmap NIST and

    上传时间: 2020-06-07

    上传用户:shancjb