European Research Framework Programs are a public policy instrument to strengthen European competitiveness through cooperation. Although they have a fixed timeframe, determined research themes, and specific expected impact, the achievements in research and development (R&D) made by the funded projects pave the way for a research continuum.
标签： New Horizons Mobile Wireless
上传时间： 2020-05-31
上传用户：shancjb
Electric distribution networks are critical parts of power delivery systems. In recent years, many new technologies and distributed energy resources have been inte- grated into these networks. To provide electricity at the possible lowest cost and at required quality, long-term planning is essential for these networks. In distribution planning, optimal location and size of necessary upgrades are determined to satisfy the demand and the technical requirements of the loads and to tackle uncertainties associated with load and distributed energy resources.
标签： Distribution Electric Planning Network
上传时间： 2020-06-07
上传用户：shancjb
This chapter surveys the high temperature and oxygen partial pressure behavior of complex oxide heterostructures as determined by in situ synchrotron X-ray methods. We consider both growth and post-growth behavior, emphasizing the observation of structural and interfacial defects relevant to the size-dependent properties seen in these systems.
标签： Metal-Oxides Thin Film
上传时间： 2020-06-07
上传用户：shancjb
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
标签： igbt
上传时间： 2022-06-20
上传用户：wangshoupeng199
