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Metal-Oxides

  • 用于锂 - 硫电池的纳米结构金属氧化物和硫化物(1)

    Lithium–sulfur (Li–S) batteries with high energy density and long cycle life are considered to be one of the most promising next-generation energy-storage systems beyond routine lithium-ion batteries. Various approaches have been proposed to break down technical barriers in Li–S battery systems. The use of nanostructured metal oxides and sulfides for high sulfur utilization and long life span of Li–S batteries is reviewed here. The relationships between the intrinsic properties of metal oxide/sulfide hosts and electrochemical performances of Li–S batteries are discussed. Nanostructured metal oxides/ sulfides hosts used in solid sulfur cathodes, separators/interlayers, lithium- metal-anode protection, and lithium polysulfides batteries are discussed respectively. Prospects for the future developments of Li–S batteries with nanostructured metal oxides/sulfides are also discussed.

    标签: 电池 纳米结构 硫化物 金属氧化物

    上传时间: 2017-11-23

    上传用户:653357637

  • Thin Film Metal-Oxides

     This chapter surveys the high temperature and oxygen partial pressure behavior of complex oxide heterostructures as determined by in situ synchrotron X-ray methods. We consider both growth and post-growth behavior, emphasizing the observation of structural and interfacial defects relevant to the size-dependent properties seen in these systems.

    标签: Metal-Oxides Thin Film

    上传时间: 2020-06-07

    上传用户:shancjb

  • FDTD for 2D metal plane object, It is very valuable reference because is the basement for 3D FDTD pr

    FDTD for 2D metal plane object, It is very valuable reference because is the basement for 3D FDTD program.

    标签: FDTD for reference basement

    上传时间: 2015-12-08

    上传用户:古谷仁美

  • Study of heat transfer and temperature of a 1x1 metal plate

    Study of heat transfer and temperature of a 1x1 metal plate

    标签: temperature transfer Study metal

    上传时间: 2015-12-13

    上传用户:253189838

  • CT图像金属伪影消除技术的文献。共3篇。 Reduction of Metal Artifacts in X-Ray Computed Tomography XrayCT_artifacts

    CT图像金属伪影消除技术的文献。共3篇。 Reduction of Metal Artifacts in X-Ray Computed Tomography XrayCT_artifacts Reduction of CT Artifacts Caused by Metallic Implants 由Willi A. Kalender, PhD Robert Hebel, Dipl Phys Johannes Ebersberger, Dr rer nat撰写

    标签: XrayCT_artifacts Tomography Reduction Artifacts

    上传时间: 2013-12-06

    上传用户:脚趾头

  • metal detect mahmod bakhtavar

    metal detect mahmod bakhtavar

    标签: bakhtavar detect mahmod metal

    上传时间: 2014-12-21

    上传用户:shanml

  • Construction Strategy of ESD P

    Construction Strategy of ESD Protection CircuitAbstract: The principles used to construct ESD protection on circuits and the basic conceptions of ESD protection design are presented.Key words:ESD protection/On circuit, ESD design window, ESD current path1 引言静电放电(ESD,Electrostatic Discharge)给电子器件环境会带来破坏性的后果。它是造成集成电路失效的主要原因之一。随着集成电路工艺不断发展,互补金属氧化物半导体(CMOS,Complementary Metal-Oxide Semiconductor)的特征尺寸不断缩小,金属氧化物半导体(MOS, Metal-Oxide Semiconductor)的栅氧厚度越来越薄,MOS 管能承受的电流和电压也越来越小,因此要进一步优化电路的抗ESD 性能,需要从全芯片ESD 保护结构的设计来进行考虑。

    标签: Construction Strategy ESD of

    上传时间: 2013-11-09

    上传用户:Aidane

  • 基于PIC单片机的脉冲电源

    基于PIC单片机的脉冲电源:设计了一种金属凝固过程用脉冲电源。该电源采用PIC16F877作为主控芯片,实现对窄脉冲电流幅值的检测,以及时电流脉冲幅值根据模糊PID算法进行闲环控制。使用结果表明:该电源的输出脉冲波形良好,电流幅值稳定,满足合金材料凝固过程的工艺要求且运行稳定可靠。关键词:脉冲电源;PIC16F877单片机;模糊PID;闲环控制 Abstract:A kind of pulse power supply was designed which uses in the metal solidification process ..I11is power supply used PIC16F877 to take the master control chip reali on to the narrow pulse electric current peak-to-peak value examination,carried on the closed-loop control to the electric current pulse peak-to-peak value basis fuzzy PID algorithm.The use result indicated ,this power supply output se profile is good,and the electric current peak-to-p~k value is stable,It satisfies the alloy material solidification process the technological requirement and movement stable reliable,Key words:p se po wer supply;PIC16F877single-chip microcontroller;f r PID;closed-loop control

    标签: PIC 单片机 脉冲电源

    上传时间: 2013-10-27

    上传用户:xcy122677

  • WP312-Xilinx新一代28nm FPGA技术简介

    Xilinx Next Generation 28 nm FPGA Technology Overview Xilinx has chosen 28 nm high-κ metal gate (HKMG) highperformance,low-power process technology and combined it with a new unified ASMBL™ architecture to create a new generation of FPGAs that offer lower power and higher performance. These devices enable unprecedented levels of integration and bandwidth and provide system architects and designers a fully programmable alternative to ASSPs and ASICs.

    标签: Xilinx FPGA 312 WP

    上传时间: 2014-12-28

    上传用户:zhang97080564

  • WP312-Xilinx新一代28nm FPGA技术简介

    Xilinx Next Generation 28 nm FPGA Technology Overview Xilinx has chosen 28 nm high-κ metal gate (HKMG) highperformance,low-power process technology and combined it with a new unified ASMBL™ architecture to create a new generation of FPGAs that offer lower power and higher performance. These devices enable unprecedented levels of integration and bandwidth and provide system architects and designers a fully programmable alternative to ASSPs and ASICs.

    标签: Xilinx FPGA 312 WP

    上传时间: 2013-12-07

    上传用户:bruce