The goal of this book is to introduce the simulation methods necessary to describe the behaviour of semiconductor devices during an electrostatic discharge (ESD). The challenge of this task is the correct description of semiconductor devices under very high current density and high temperature transients. As it stands, the book can be no more than a snapshot and a summary of the research in this field during the past few years. The authors hope that the book will provide the basis for further development of simulation methods at this current frontier of device physics.
标签： Development Protection ESD
上传时间： 2020-06-05
上传用户：shancjb
The challenges associated with the design and implementation of Electro- static Discharge (ESD) protection circuits become increasingly complex as technology is scaled well into nano-metric regime. One must understand the behavior of semiconductor devices under very high current densities, high temperature transients in order to surmount the nano-meter ESD challenge. As a consequence, the quest for suitable ESD solution in a given technology must start from the device level. Traditional approaches of ESD design may not be adequate as the ESD damages occur at successively lower voltages in nano-metric dimensions.
标签： Protection Circuit Device Design ESD and
上传时间： 2020-06-05
上传用户：shancjb
As we enter the next millennium, there are clear technological patterns. First, the electronic industry continues to scale microelectronic structures to achieve faster devices, new devices, or more per unit area. Secondly, electrostatic charge, electrostatic discharge (ESD), electrical overstress (EOS) and electromagnetic emissions (EMI) continue to be a threat to these scaled structures. This dichotomy presents a dilemma for the scaling of semiconductor technologies and a future threat to new technologies. Technological advancements, material changes, design techniques, and simulation can fend off this growing concern – but to maintain this ever-threatening challenge, one must continue to establish research and education in this issue.
标签： ESD-Phenomena-and-the-Reliability
上传时间： 2020-06-05
上传用户：shancjb
