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  • CH340C+RT9013+MINI USB接口板 AD设计硬件原理图+PCB文件 ALTIUM设计

    CH340C+RT9013+MINI USB接口板 AD设计硬件原理图+PCB文件,ALTIUM设计的2层板设计,包括完整的原理图和PCB文件,主要器件如下:Library Component Count : 12Name                Description----------------------------------------------------------------------------------------------------CAP                 CapacitorCC2640EM            CC2630 ModuleCH340               CH340 USB 2 UARTCON11               Connector 11pinsCON12               Connector 12pinsCON3X2              Connector 5*2LED                 LEDRES                 ResistorRT9013              RT9013 3.3VSWITCH              switch 6*6USB1                USB ConnectorsXDS110-Lte          XDS110-Lite Target Interface

    标签: ch340c rt9013 usb 接口 ad设计

    上传时间: 2021-11-24

    上传用户:canderile

  • NCP1399 电流模式控制器 手册

    NCP1399 是高性能电流模式控制器,半桥谐 变换器。此控制器实现 600 V 门驱动、 简化布 局和减少外部组件计数 。built - in 和 Brown - Out  输入函数简化了执行在所有应用程序的控制器。 在 PFC 前阶段的应用 NCP1399 需要设有专用的 输出驱动 PFC 前级控制器。此功能专用 skip-mode 技术进一步提高轻负载效率的整个应 用程序。 NCP1399 提供全套的保护功能允许安全 运行在任何应用程序中。这包括:过载保护,过 流保护以防止硬开关周期, brown- out 检测,打 开光电耦合器检测, 死区自动调整, 过电压(OVP) 和 (OTP) 过温保护

    标签: ncp1399 电流模式控制器

    上传时间: 2021-12-17

    上传用户:qingfengchizhu

  • TMS320F28035 DSP最小核心板开发板ALTIUM设计原理图 无PCB板图

    TMS320F28035 DSP最小核心板开发板ALTIUM设计原理图,无PCB板图。原理图已在项目中使用,包括CAN通信电路和瓷隔离电路等,可以做为你的设计参考,所用器件型号如下:ADUM1201AT24CXXBAV99               R26010005CAP                 CapacitorHeader 4            Header, 4-PinHeader 4X2          Header, 4-Pin, Dual rowINDUCTORL2                  LM317               R25040043NTC                 R27040030OPTOISORES                 R20190049RES1                SN65HVD230/SO8SW-SPST             Single-Pole, Single-Throw SwitchTL431TMS320F28035-80XTAL                Crystal Oscillator

    标签: tms320f28035 dsp

    上传时间: 2021-12-22

    上传用户:trh505

  • DDR4标准 JESD79_4

    1. Scope ......................................................................................................................................................................... 12. DDR4 SDRAM Package Pinout and Addressing ....................................................................................................... 22.1 DDR4 SDRAM Row for X4,X8 and X16 ................................................................................................................22.2 DDR4 SDRAM Ball Pitch........................................................................................................................................22.3 DDR4 SDRAM Columns for X4,X8 and X16 ..........................................................................................................22.4 DDR4 SDRAM X4/8 Ballout using MO-207......................................................................................................... 22.5 DDR4 SDRAM X16 Ballout using MO-207.............................................................................................................32.6 Pinout Description ..................................................................................................................................................52.7 DDR4 SDRAM Addressing.....................................................................................................................................73. Functional Description ...............................................................................................................................................83.1 Simplified State Diagram ....................................................................................................................................83.2 Basic Functionality..................................................................................................................................................93.3 RESET and Initialization Procedure .....................................................................................................................103.3.1 Power-up Initialization Sequence .............................................................................................................103.3.2 Reset Initialization with Stable Power ......................................................................................................113.4 Register Definition ................................................................................................................................................123.4.1 Programming the mode registers .............................................................................................................123.5 Mode Register ......................................................................................................................................................134. DDR4 SDRAM Command Description and Operation ............................................................................................. 244.1 Command Truth Table ..........................................................................................................................................244.2 CKE Truth Table ...................................................................................................................................................254.3 Burst Length, Type and Order ..............................................................................................................................264.3.1 BL8 Burst order with CRC Enabled .........................................................................................................264.4 DLL-off Mode & DLL on/off Switching procedure ................................................................................................274.4.1 DLL on/off switching procedure ...............................................................................................................274.4.2 DLL “on” to DLL “off” Procedure ..............................................................................................................274.4.3 DLL “off” to DLL “on” Procedure ..............................................................................................................284.5 DLL-off Mode........................................................................................................................................................294.6 Input Clock Frequency Change ............................................................................................................................304.7 Write Leveling.......................................................................................................................................................314.7.1 DRAM setting for write leveling & DRAM termination function in that mode ............................................324.7.2 Procedure Description .............................................................................................................................334.7.3 Write Leveling Mode Exit .........................................................................................................................34

    标签: DDR4

    上传时间: 2022-01-09

    上传用户:

  • STM32L053C8T6数据手册

    STM32L053C8T6数据手册Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 125 °C temperature range – 0.27 µA Standby mode (2 wakeup pins) – 0.4 µA Stop mode (16 wakeup lines) – 0.8 µA Stop mode + RTC + 8 KB RAM retention – 139 µA/MHz Run mode at 32 MHz – 3.5 µs wakeup time (from RAM) – 5 µs wakeup time (from Flash) • Core: ARM® 32-bit Cortex®-M0+ with MPU – From 32 kHz up to 32 MHz max.  – 0.95 DMIPS/MHz • Reset and supply management – Ultra-safe, low-power BOR (brownout reset)  with 5 selectable thresholds – Ultralow power POR/PDR – Programmable voltage detector (PVD) • Clock sources – 1 to 25 MHz crystal oscillator – 32 kHz oscillator for RTC with calibration – High speed internal 16 MHz factory-trimmed RC  (+/- 1%) – Internal low-power 37 kHz RC – Internal multispeed low-power 65 kHz to  4.2 MHz RC – PLL for CPU clock • Pre-programmed bootloader – USART, SPI supported • Development support – Serial wire debug supported • Up to 51 fast I/Os (45 I/Os 5V tolerant) • Memories – Up to 64 KB Flash with ECC – 8KB RAM – 2 KB of data EEPROM with ECC – 20-byte backup register

    标签: stm32l053c8t6

    上传时间: 2022-02-06

    上传用户:

  • PW5300_2.0.pdf规格书下载

    The PW5300 is a current mode boost DC-DC converter. Its PWM circuitry with built-in 0.2Ω powerMOSFET make this regulator highly power efficient. The internal compensation network alsominimizes as much as 6 external component counts. The non-inverting input of error amplifierconnects to a 0.6V precision reference voltage and internal soft-start function can reduce the inrushcurrent. The PW5300 is available in the SOT23-6L package and provides space-saving PCB for theapplication fields

    标签: pw5300

    上传时间: 2022-02-11

    上传用户:jiabin

  • PW5200系列_2.0.pdf规格书下载

    The PW5200A/ PW5200C is high efficiency synchronous, PWM step-up DC/DC converters optimizedto provide a high efficient solution to medium power systems. The devices work with a 1.4MHz fixedfrequency switching. These features minimize overall solution footprint by allowing the use of tiny,low profile inductors and ceramic capacitors. Automatic PWM/PFM mode switching at light loadsaves power and improves efficiency

    标签: pw5200

    上传时间: 2022-02-11

    上传用户:

  • PW4055_2.0.pdf规格书下载

    The PW4055 is a complete constant-current /constant-voltage linear charger for single cell lithiumion batteries.Its ThinSOT package and low external component count make the PW4055 ideallysuited for portable applications.Furthermore, the PW4055 is specifically designed to work within USBpower specifications.The PW4055 No external sense resistor is needed, and no blocking diode is required due to theinternal MOSFET architecture.Thermal feedback regulates the charge current to limit the dietemperature during high power operation or high ambient temperature. The charge voltage is fixedat 4.2V, and the charge current can be programmed externally with a single resistor. The PW4055automatically terminates the charge cycle when the charge current drops to 1/10th the programmedvalue after the final float voltage is reached. When the input supply (wall adapter or USB supply) isremoved, the PW4055 automatically enters a low current state, dropping the battery drain currentto less than 2µA. The PW4055 can be put into shutdown mode, reducing the supply current to 25µA.The BAT pin has a 7KV ESD(HBM) capability. Other features include charge current monitor, undervoltage lockout, automatic recharge and a status pin to indicate charge termination and the presenceof an input voltage

    标签: pw4055

    上传时间: 2022-02-11

    上传用户:jason_vip1

  • PW2606B.pdf规格书下载

    The PW2606B is a front-end over voltage and over current protection device. It achieves wide inputvoltage range from 2.5VDC to 40VDC. The over voltage threshold can be programmed externally orset to internal default setting. The low resistance of integrated power path nFET switch ensures betterperformance for battery charging system applications. It can deliver up to 1A current to satisfy thebattery supply system. It integrates the over-temperature protection shutdown and auto-recoverycircuit with hysteresis to protect against over current events

    标签: pw2606b

    上传时间: 2022-02-11

    上传用户:

  • PW2601_2.0.pdf规格书下载

    The PW2601 is a charger front-end integrated circuit designed to provide protection to Li-ionbatteries from failures of charging circuitry. The device monitors the input voltage, battery voltageand the charging current to make sure all three parameters are operated in normal range. Thedevice will switch off internal MOSFET to disconnect IN to OUT to protect load when any of inputvoltage, output current exceeds the threshold. The Over temperature protection (OTP) functionmonitors chip temperature to protect the device. The PW2601 also can protect the system’sbattery from being over charged by monitors the battery voltage continuously. The deviceoperates like a linear regulator, maintaining a 5.1V output with input voltages up to the input overvoltage threshold.The PW2601 is available in DFN-2x2-8L package. Standard products are Pb-free and Halogenfree

    标签: pw2601

    上传时间: 2022-02-11

    上传用户: