Most circuit designers are familiar with diode dynamiccharacteristics such as charge storage, voltage dependentcapacitance and reverse recovery time. Less commonlyacknowledged and manufacturer specifi ed is diode forwardturn-on time. This parameter describes the timerequired for a diode to turn on and clamp at its forwardvoltage drop. Historically, this extremely short time, unitsof nanoseconds, has been so small that user and vendoralike have essentially ignored it. It is rarely discussed andalmost never specifi ed. Recently, switching regulator clockrate and transition time have become faster, making diodeturn-on time a critical issue. Increased clock rates aremandated to achieve smaller magnetics size; decreasedtransition times somewhat aid overall effi ciency but areprincipally needed to minimize IC heat rise. At clock speedsbeyond about 1MHz, transition time losses are the primarysource of die heating.
上传时间： 2013-10-10
上传用户：谁偷了我的麦兜
A complete design for a data acquisition card for the IBM PC is detailed in this application note. Additionally, C language code is provided to allow sampling of data at speed of more than 20kHz. The speed limitation is strictly based on the execution speed of the "C" data acquisition loop. A "Turbo" XT can acquire data at speeds greater than 20kHz. Machines with 80286 and 80386 processors can go faster than 20kHz. The computer that was used as a test bed in this application was an XT running at 4.77MHz and therefore all system timing and acquisition time measurements are based on a 4.77MHz clock speed.
上传时间： 2013-10-29
上传用户：BOBOniu
使用时钟PLL的源同步系统时序分析一）回顾源同步时序计算Setup Margin = Min Clock Etch Delay – Max Data Etch Delay – Max Delay Skew – Setup TimeHold Margin = Min Data Etch Delay – Max Clock Etch Delay + Min Delay Skew + Data Rate – Hold Time下面解释以上公式中各参数的意义：Etch Delay：与常说的飞行时间(Flight Time)意义相同，其值并不是从仿真直接得到，而是通过仿真结果的后处理得来。请看下面图示：图一为实际电路，激励源从输出端，经过互连到达接收端，传输延时如图示Rmin，Rmax，Fmin，Fmax。图二为对应输出端的测试负载电路，测试负载延时如图示Rising，Falling。通过这两组值就可以计算得到Etch Delay 的最大和最小值。
上传时间： 2013-11-05
上传用户：VRMMO
The Circuit Designer’s Companion Second edition Tim Williams
标签： Designers Companion Circuit PCB
上传时间： 2013-11-04
上传用户：fredguo
数字与模拟电路设计技巧IC与LSI的功能大幅提升使得高压电路与电力电路除外，几乎所有的电路都是由半导体组件所构成，虽然半导体组件高速、高频化时会有EMI的困扰，不过为了充分发挥半导体组件应有的性能，电路板设计与封装技术仍具有决定性的影响。 模拟与数字技术的融合由于IC与LSI半导体本身的高速化，同时为了使机器达到正常动作的目的，因此技术上的跨越竞争越来越激烈。虽然构成系统的电路未必有clock设计，但是毫无疑问的是系统的可靠度是建立在电子组件的选用、封装技术、电路设计与成本，以及如何防止噪讯的产生与噪讯外漏等综合考虑。机器小型化、高速化、多功能化使得低频/高频、大功率信号/小功率信号、高输出阻抗/低输出阻抗、大电流/小电流、模拟/数字电路，经常出现在同一个高封装密度电路板，设计者身处如此的环境必需面对前所未有的设计思维挑战，例如高稳定性电路与吵杂(noisy)性电路为邻时，如果未将噪讯入侵高稳定性电路的对策视为设计重点，事后反复的设计变更往往成为无解的梦魇。模拟电路与高速数字电路混合设计也是如此，假设微小模拟信号增幅后再将full scale 5V的模拟信号，利用10bit A/D转换器转换成数字信号，由于分割幅宽祇有4.9mV，因此要正确读取该电压level并非易事，结果造成10bit以上的A/D转换器面临无法顺利运作的窘境。另一典型实例是使用示波器量测某数字电路基板两点相隔10cm的ground电位，理论上ground电位应该是零，然而实际上却可观测到4.9mV数倍甚至数十倍的脉冲噪讯(pulse noise)，如果该电位差是由模拟与数字混合电路的grand所造成的话，要测得4.9 mV的信号根本是不可能的事情，也就是说为了使模拟与数字混合电路顺利动作，必需在封装与电路设计有相对的对策，尤其是数字电路switching时，ground vance noise不会入侵analogue ground的防护对策，同时还需充分检讨各电路产生的电流回路(route)与电流大小，依此结果排除各种可能的干扰因素。以上介绍的实例都是设计模拟与数字混合电路时经常遇到的瓶颈，如果是设计12bit以上A/D转换器时，它的困难度会更加复杂。
上传时间： 2013-11-16
上传用户：731140412
LAYOUT REPORT .............. 1 目錄.................. 1 1. PCB LAYOUT 術語解釋(TERMS)......... 2 2. Test Point : ATE 測試點供工廠ICT 測試治具使用............ 2 3. 基準點 (光學點) -for SMD:........... 4 4. 標記 (LABEL ING)......... 5 5. VIA HOLE PAD................. 5 6. PCB Layer 排列方式...... 5 7.零件佈置注意事項 (PLACEMENT NOTES)............... 5 8. PCB LAYOUT 設計............ 6 9. Transmission Line ( 傳輸線 )..... 8 10.General Guidelines – 跨Plane.. 8 11. General Guidelines – 繞線....... 9 12. General Guidelines – Damping Resistor. 10 13. General Guidelines - RJ45 to Transformer................. 10 14. Clock Routing Guideline........... 12 15. OSC & CRYSTAL Guideline........... 12 16. CPU
上传时间： 2013-12-20
上传用户：康郎
Integrated EMI/Thermal Design forSwitching Power SuppliesWei ZhangThesis submitted to the Faculty of theVirginia Polytechnic Institute and State Universityin partial fulfillment of the requirements for the degree of Integrated EMI/Thermal Design forSwitching Power SuppliesWei Zhang(ABSTRACT)This work presents the modeling and analysis of EMI and thermal performancefor switch power supply by using the CAD tools. The methodology and design guidelinesare developed.By using a boost PFC circuit as an example, an equivalent circuit model is builtfor EMI noise prediction and analysis. The parasitic elements of circuit layout andcomponents are extracted analytically or by using CAD tools. Based on the model, circuitlayout and magnetic component design are modified to minimize circuit EMI. EMI filtercan be designed at an early stage without prototype implementation.In the second part, thermal analyses are conducted for the circuit by using thesoftware Flotherm, which includes the mechanism of conduction, convection andradiation. Thermal models are built for the components. Thermal performance of thecircuit and the temperature profile of components are predicted. Improved thermalmanagement and winding arrangement are investigated to reduce temperature.In the third part, several circuit layouts and inductor design examples are checkedfrom both the EMI and thermal point of view. Insightful information is obtained.
上传时间： 2013-11-10
上传用户：1595690
This document provides practical, common guidelines for incorporating PCI Express interconnect layouts onto Printed Circuit Boards (PCB) ranging from 4-layer desktop baseboard designs to 10- layer or more server baseboard designs. Guidelines and constraints in this document are intended for use on both baseboard and add-in card PCB designs. This includes interconnects between PCI Express devices located on the same baseboard (chip-to-chip routing) and interconnects between a PCI Express device located “down” on the baseboard and a device located “up” on an add-in card attached through a connector. This document is intended to cover all major components of the physical interconnect including design guidelines for the PCB traces, vias and AC coupling capacitors, as well as add-in card edge-finger and connector considerations. The intent of the guidelines and examples is to help ensure that good high-speed signal design practices are used and that the timing/jitter and loss/attenuation budgets can also be met from end-to-end across the PCI Express interconnect. However, while general physical guidelines and suggestions are given, they may not necessarily guarantee adequate performance of the interconnect for all layouts and implementations. Therefore, designers should consider modeling and simulation of the interconnect in order to ensure compliance to all applicable specifications. The document is composed of two main sections. The first section provides an overview of general topology and interconnect guidelines. The second section concentrates on physical layout constraints where bulleted items at the beginning of a topic highlight important constraints, while the narrative that follows offers additional insight.
上传时间： 2013-10-15
上传用户：busterman
In this paper, two types of MMIC voltage controlled oscillators have been successfully demonstrated. The first chip with single tuning diode shows the excellent tuning linearity. The second chip with two tuning diodes can improve the tuning bandwidth.
上传时间： 2013-10-17
上传用户：xjz632
高的工作电压高达100V N双N沟道MOSFET同步驱动 The D810DCDC is a synchronous step-down switching regulator controller that can directly step-down voltages from up to 100V, making it ideal for telecom and automotive applications. The D810DCDC uses a constant on-time valley current control architecture to deliver very low duty cycles with accurate cycle-by-cycle current limit, without requiring a sense resistor. A precise internal reference provides 0.5% DC accuracy. A high bandwidth (25MHz) error amplifi er provides very fast line and load transient response. Large 1Ω gate drivers allow the D810DCDC to drive multiple MOSFETs for higher current applications. The operating frequency is selected by an external resistor and is compensated for variations in VIN and can also be synchronized to an external clock for switching-noise sensitive applications. Integrated bias control generates gate drive power from the input supply during start-up and when an output shortcircuit occurs, with the addition of a small external SOT23 MOSFET. When in regulation, power is derived from the output for higher effi ciency.
上传时间： 2013-10-24
上传用户：wd450412225
