One of the most misunderstood constructs in the Verilog language is the nonblockingassignment. Even very experienced Verilog designers do not fully understand how nonblockingassignments are scheduled in an IEEE compliant Verilog simulator and do not understand whenand why nonblocking assignments should be used. This paper details how Verilog blocking andnonblocking assignments are scheduled, gives important coding guidelines to infer correctsynthesizable logic and details coding styles to avoid Verilog simulation race conditions
上传时间： 2013-10-17
上传用户：tb_6877751
IGBT(Insulated Gate Bipolar Transistor)，绝缘栅双极型晶体管，是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件, 兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。GTR饱和压降低，载流密度大，但驱动电流较大;MOSFET驱动功率很小，开关速度快，但导通压降大，载流密度小。IGBT综合了以上两种器件的优点，驱动功率小而饱和压降低。
上传时间： 2013-11-03
上传用户：panpanpan
Abstract: Many digital devices incorporate analog circuits. For instance, microprocessors, applicationspecificintegrated circuits (ASICs), and field-programmable gate arrays (FPGAs) may have internalvoltage references, analog-to-digital converters (ADCs) or digital-to-analog converters (DACs). However,there are challenges when you integrate more analog onto a digital design. As with all things in life, inelectronics we must always trade one parameter for another, with the application dictating the propertrade-off of analog function. In this application note, we examine how the demand for economy of spaceand cost pushes analog circuits onto digital substrates, and what design challenges emerge.
上传时间： 2013-11-17
上传用户：菁菁聆听
Abstract: This application note describes a new generation of digital-input Class D audio amplifiers that achieve high PSRRperformance, comparable to traditional analog Class D amplifiers. More importantly, these digital-input Class D amplifiersprovide additional benefits of reduced power, complexity, noise, and system cost.
上传时间： 2013-12-20
上传用户：JIUSHICHEN
交流功率因数转换器 特点： 精确度0.25%满刻度 ±0.25o 多种输入,输出选择 输入与输出绝缘耐压2仟伏特/1分钟 冲击电压测试5仟伏特(1.2x50us) (IEC255-4,ANSI C37.90a/1974) 突波电压测试2.5仟伏特(0.25ms/1MHz) (IEC255-4) 尺寸小，稳定性高 主要规格： 精确度: 0.25% F.S. ±0.25°(23 ±5℃) 输入负载: <0.2VA (Voltage) <0.2VA (Current) 最大过载能力: Current related input: 3 x rated continuous 10 x rated 30 sec. 25 x rated 3sec. 50 x rated 1sec. Voltage related input:maximum 2 x rated continuous 输出反应速度: < 250ms(0~90%) 输出负载能力: < 10mA for voltage mode < 10V for current mode 输出之涟波: < 0.1% F.S. 归零调整范围: 0~ ±5% F.S. 最大值调整范围: 0~ ±10% F.S. 温度系数: 100ppm/℃ (0~50℃) 隔离特性: Input/Output/Power/Case 绝缘抗阻: >100Mohm with 500V DC 绝缘耐压能力: 2KVac/1 min. (input/output/power/case) 突波测试: ANSI C37.90a/1974,DIN-IEC 255-4 impulse voltage 5KV(1.2x50us) 使用环境条件: -20~60℃(20 to 90% RH non-condensed) 存放环境条件: -30~70℃(20 to 90% RH non-condensed) CE认证: EN 55022:1998/A1:2000 Class A EN 61000-3-2:2000 EN 61000-3-3:1995/A1:2001 EN 55024:1998/A1:2001
上传时间： 2013-10-22
上传用户：thing20
交流频率转换器 特点： 精确度0.05%满刻度(Accuracy 0.05%F.S.) 多种输入,输出选择 输入与输出绝缘耐压2仟伏特/1分钟 冲击电压测试5仟伏特(1.2x50us) (IEC255-4,ANSI C37.90a/1974) 突波电压测试2.5仟伏特(0.25ms/1MHz) (IEC255-4) 尺寸小，稳定性高 2:主要规格 精确度: 0.05% F.S. (23 ±5℃) 输入负载: <0.2VA 最大过载能力:maximum 2 x rated continuous 输出反应时间: <250ms (0~90%) 输出负载能力: <10mA for voltage mode <10V for current mode 输出涟波: <0.1% F.S. 归零调整范围: 0~±5% F.S. 最大值调整范围: 0~±10% F.S. 温度系数: 50ppm/℃ (0~50℃) 隔离特性: Input/Output/Power/Case 绝缘抗阻: >100M ohm with 500V DC 绝缘耐压能力: 2KVac/1 min. (input/output/power) 行动测试: ANSI C37.90a/1974,DIN-IEC 255-4 impulse voltage 5KV (1.2 x 50us) 突波测试: 2.5KV-0.25ms/1MHz 使用环境条件: -20~60℃(20 to 90% RH non-condensed) 存放环境条件: -30~70℃(20 to 90% RH non-condensed) CE认证: EN 55022:1998/A1:2000 Class A EN 61000-3-2:2000 EN 61000-3-3:1995/A1:2001 EN 55024:1998/A1:2001
上传时间： 2013-10-11
上传用户：xzt
交流电压，电流转换器 特点： 精确度0.25%满刻度(RMS) 多种输入,输出选择 输入与输出绝缘耐压2仟伏特/1分钟 冲击电压测试5仟伏特(1.2x50us) (IEC255-4,ANSI C37.90a/1974) 突波电压测试2.5仟伏特(0.25ms/1MHz) (IEC255-4) 尺寸小，稳定性高 2:主要规格 精确度:0.25%F.S.(RMS) (23 ±5℃) 输入负载: <0.2VA(voltage) <0.2VA(current) 最大过载能力: Current related input:3 x rated continuous 10 x rated 30 sec. ,25 x rated 3sec. 50 x rated 1sec. Voltage related input:maximum 2x rated continuous 输出反应时间: <250ms (0~90%) 输出负载能力: <10mA for voltage mode <10V for current mode 输出涟波: <0.1% F.S. 归零调整范围: 0~±5% F.S. 最大值调整范围: 0~±10% F.S. 温度系数: 100ppm/℃ (0~50℃) 隔离特性: Input/Output/Power/Case 绝缘抗阻: >100Mohm with 500V DC 绝缘耐压能力: 2KVac/1 min. (input/output/power) 行动测试: ANSI C37.90a/1974,DIN-IEC 255-4 impulse voltage 5KV (1.2 x 50us) 突波测试: 2.5KV-0.25ms/1MHz 使用环境条件: -20~60℃(20 to 90% RH non-condensed) 存放环境条件: -30~70℃(20 to 90% RH non-condensed) CE认证: EN 55022:1998/A1:2000 Class A EN 61000-3-2:2000 EN 61000-3-3:1995/A1:2001 EN 55024:1998/A1:2001
上传时间： 2013-11-09
上传用户：非衣2016
The MAX17600–MAX17605 devices are high-speedMOSFET drivers capable of sinking /sourcing 4A peakcurrents. The devices have various inverting and noninvertingpart options that provide greater flexibility incontrolling the MOSFET. The devices have internal logiccircuitry that prevents shoot-through during output-statchanges. The logic inputs are protected against voltagespikes up to +14V, regardless of VDD voltage. Propagationdelay time is minimized and matched between the dualchannels. The devices have very fast switching time,combined with short propagation delays (12ns typ),making them ideal for high-frequency circuits. Thedevices operate from a +4V to +14V single powersupply and typically consume 1mA of supply current.The MAX17600/MAX17601 have standard TTLinput logic levels, while the MAX17603 /MAX17604/MAX17605 have CMOS-like high-noise margin (HNM)input logic levels. The MAX17600/MAX17603 are dualinverting input drivers, the MAX17601/MAX17604 aredual noninverting input drivers, and the MAX17602 /MAX17605 devices have one noninverting and oneinverting input. These devices are provided with enablepins (ENA, ENB) for better control of driver operation.
上传时间： 2013-12-20
上传用户：zhangxin
Abstract: If sensitive analog systems are run from one supply without the sufficient bypassing to eliminate noise,
上传时间： 2013-11-23
上传用户：qiulin1010
Abstract: A perfect voltage reference produces a stable voltage independent of any external factors. Real-world voltagereferences, of course, are subject to errors caused by many external factors. One causeof these major errors istemperature. Without care, it is easy to operate a voltage reference outside its operating temperature range. Thisapplication note describes how references respond to temperature changes, and how self-heating can cause a voltagereference to operate outside its recommended temperature range. Once understood, this knowledge can then be used toavoid making this design error.
上传时间： 2013-11-08
上传用户：xianglee
