Texas instruments MIPI DSI to eDP converter. Input supports 2 channel, 4 lanes each, up to 1.5GBit/s. Total input bandwidth is 12Gbit/s. Output eDP 1.4 1,2 or 4 lanes up to 5.4Gbit/s. output up to 4096x2304 60fps.
上传时间： 2021-12-22
上传用户：lipengxu
一、设计目的1、学习基本理论在实践中综合运用的初步经验，掌握模拟电路设计的基本方法、设计步骤，培养综合设计与调试能力。2、学会直流稳压电源的设计方法和性能指标测试方法。3、培养实践技能，提高分析和解决实际问题的能力。二、设计任务及要求1、设计一个连续可调的直流稳压电源，主要技术指标要求：① 输入（AC）：U=220V，f=50HZ；② 输出直流电压：U0=9→12v；③ 输出电流：I0<=1A；④ 纹波电压：Up-p<30mV；2、设计电路结构，选择电路元件，计算确定元件参数，画出实用原理电路图。3、自拟实验方法、步骤及数据表格，提出测试所需仪器及元器件的规格、数量。4、在实验室MultiSIM8-8330软件上画出电路图，并仿真和调试，并测试其主要性能参数。
标签： 直流稳压电源
上传时间： 2021-12-23
上传用户：lipengxu
1. Scope ......................................................................................................................................................................... 12. DDR4 SDRAM Package Pinout and Addressing ....................................................................................................... 22.1 DDR4 SDRAM Row for X4,X8 and X16 ................................................................................................................22.2 DDR4 SDRAM Ball Pitch........................................................................................................................................22.3 DDR4 SDRAM Columns for X4,X8 and X16 ..........................................................................................................22.4 DDR4 SDRAM X4/8 Ballout using MO-207......................................................................................................... 22.5 DDR4 SDRAM X16 Ballout using MO-207.............................................................................................................32.6 Pinout Description ..................................................................................................................................................52.7 DDR4 SDRAM Addressing.....................................................................................................................................73. Functional Description ...............................................................................................................................................83.1 Simplified State Diagram ....................................................................................................................................83.2 Basic Functionality..................................................................................................................................................93.3 RESET and Initialization Procedure .....................................................................................................................103.3.1 Power-up Initialization Sequence .............................................................................................................103.3.2 Reset Initialization with Stable Power ......................................................................................................113.4 Register Definition ................................................................................................................................................123.4.1 Programming the mode registers .............................................................................................................123.5 Mode Register ......................................................................................................................................................134. DDR4 SDRAM Command Description and Operation ............................................................................................. 244.1 Command Truth Table ..........................................................................................................................................244.2 CKE Truth Table ...................................................................................................................................................254.3 Burst Length, Type and Order ..............................................................................................................................264.3.1 BL8 Burst order with CRC Enabled .........................................................................................................264.4 DLL-off Mode & DLL on/off Switching procedure ................................................................................................274.4.1 DLL on/off switching procedure ...............................................................................................................274.4.2 DLL “on” to DLL “off” Procedure ..............................................................................................................274.4.3 DLL “off” to DLL “on” Procedure ..............................................................................................................284.5 DLL-off Mode........................................................................................................................................................294.6 Input Clock Frequency Change ............................................................................................................................304.7 Write Leveling.......................................................................................................................................................314.7.1 DRAM setting for write leveling & DRAM termination function in that mode ............................................324.7.2 Procedure Description .............................................................................................................................334.7.3 Write Leveling Mode Exit .........................................................................................................................34
标签： DDR4
上传时间： 2022-01-09
上传用户：13692533910
STM32L053C8T6数据手册Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 125 °C temperature range – 0.27 µA Standby mode (2 wakeup pins) – 0.4 µA Stop mode (16 wakeup lines) – 0.8 µA Stop mode + RTC + 8 KB RAM retention – 139 µA/MHz Run mode at 32 MHz – 3.5 µs wakeup time (from RAM) – 5 µs wakeup time (from Flash) • Core: ARM® 32-bit Cortex®-M0+ with MPU – From 32 kHz up to 32 MHz max. – 0.95 DMIPS/MHz • Reset and supply management – Ultra-safe, low-power BOR (brownout reset) with 5 selectable thresholds – Ultralow power POR/PDR – Programmable voltage detector (PVD) • Clock sources – 1 to 25 MHz crystal oscillator – 32 kHz oscillator for RTC with calibration – High speed internal 16 MHz factory-trimmed RC (+/- 1%) – Internal low-power 37 kHz RC – Internal multispeed low-power 65 kHz to 4.2 MHz RC – PLL for CPU clock • Pre-programmed bootloader – USART, SPI supported • Development support – Serial wire debug supported • Up to 51 fast I/Os (45 I/Os 5V tolerant) • Memories – Up to 64 KB Flash with ECC – 8KB RAM – 2 KB of data EEPROM with ECC – 20-byte backup register
标签： stm32l053c8t6
上传时间： 2022-02-06
上传用户：突破自我
The PW5410B is a low noise, constant frequency (1.2MHz) switched capacitor voltage doubler. Itproduces a regulated output voltage from 1.8V to 5V input with up to 100mA of output current. Lowexternal parts count (one flying capacitor and two small bypass capacitors at VIN and VOUT) makethe PW5410B ideally suited for small, battery-powered applications
标签： pw5410
上传时间： 2022-02-11
上传用户：wangshoupeng199
The PW5410A is a low noise, constant frequency (1.2MHz) switched capacitor voltage doubler. Itproduces a regulated output voltage from 2.7V to 5V input with up to 250mA of output current. Lowexternal parts count (one flying capacitor and two small bypass capacitors at VIN and VOUT) makethe PW5410A ideally suited for small, battery-powered applications
标签： pw5410
上传时间： 2022-02-11
上传用户：nicholas28
The PW5200A/ PW5200C is high efficiency synchronous, PWM step-up DC/DC converters optimizedto provide a high efficient solution to medium power systems. The devices work with a 1.4MHz fixedfrequency switching. These features minimize overall solution footprint by allowing the use of tiny,low profile inductors and ceramic capacitors. Automatic PWM/PFM mode switching at light loadsaves power and improves efficiency
标签： pw5200
上传时间： 2022-02-11
上传用户：joshau007
The PW4556 series of devices are highly integrated Li-Ion and Li-Pol linear chargers targetedat small capacity battery for portable applications. It is a complete constant-current/ constantvoltage linear charger. No external sense resistor is needed, and no blocking diode is required dueto the internal MOSFET architecture. It can deliver up to 300mA of charge current (using a goodthermal PCB layout) with a final float voltage accuracy of ±1%. The charge voltage is fixed at 4.2V or4.35V, and the charge current can be programmed externally with a single resistor. The chargerfunction has high accuracy current and voltage regulation loops and charge termination
标签： pw4556
上传时间： 2022-02-11
上传用户：1208020161
The PW4554 is a cost-effective, fully integrated high input voltage single-cell Li-ion battery charger.The charger uses a CC/CV charge profile required by Li-ion battery. The charger accepts an inputvoltage up to 24V but is disabled when the input voltage exceeds the OVP threshold, typically 6.8V,to prevent excessive power dissipation. The 24V rating eliminates the over-voltage protection circuitrequired in a low input voltage charger
标签： pw4554
上传时间： 2022-02-11
上传用户：lw125849842
The PW2606B is a front-end over voltage and over current protection device. It achieves wide inputvoltage range from 2.5VDC to 40VDC. The over voltage threshold can be programmed externally orset to internal default setting. The low resistance of integrated power path nFET switch ensures betterperformance for battery charging system applications. It can deliver up to 1A current to satisfy thebattery supply system. It integrates the over-temperature protection shutdown and auto-recoverycircuit with hysteresis to protect against over current events
标签： pw2606b
上传时间： 2022-02-11
上传用户：joshau007
