FC162是一款低功耗，高速，高噪声容限，EPROM/ROM基于8位CMOS工艺制造的单片机，采用RISC指令集，共有42条指令， 除分支指令为两个周期指令以外其余为单周期指令。这种易用、易记的指令集大大缩短了开发时间。 FC162包含了上电复位(Power-on Reset POR)，掉电复位(Brown-out Reset BOR)， 上电复位计数器（Power-up Reset Timer PWRT），振荡启动计数器 (Oscillator Start-up Timer OST)， 看门狗定时器(Watchdog Timer)， EPROM/ROM， SRAM，双向三 态I/O口，（可以设置为上拉/下拉）， 省电睡眠模式， 一个带8位预置器的8位定时/计数器，独立中断，睡眠唤醒模式和可靠的代码保 护，有两个振荡源可供用户配置选择，包含省电振荡源和低功耗振荡器。 FC162可访问256×13的程序存储空间。 FC162能直接或间接访问寄存器以及数据存储区，所有的特殊功能寄存器分布在数据存储区同时包含特定的程序指针。
标签： fc162
上传时间： 2021-11-13
上传用户：qingfengchizhu
General Design Specification:1. AC Input Range 180-264Vac, Isolated ac-dc offline, 12LEDS,Output 700mA2. Intelligent wall dimmer detections(Leading-edge dimmer , Trailing-edgedimmer , No-dimmer)3. Multiple dimming control scheme4. Wide dimming range from 1% up to 100%5. No visible flicker6. Resonant control to achieve high efficiency7. High Power Factor, 0.9 without dimmer8. Temperature degrade control to adjust the LED9. Primary-only Sensing eliminates opto-isolator feedback and simplifies design
标签： iw3617
上传时间： 2021-12-03
上传用户：canderile
那么我们可以进行如下计算：1，输出电流Iout=Pout/Udc=600/400=1.5A2，最大输入功率Pin=Pout/η=600/0.92=652W3，输入电流最大有效值Iinrmsmax=Pin/Umin=652/85=7.67A4，那么输入电流有效值峰值为Iinrmsmax*1.414=10.85A5，高频纹波电流取输入电流峰值的20%，那么Ihf=0.2*Iinrmsmax=0.2*10.85=2.17A6，那么输入电感电流最大峰值为：ILpk=Iinrmsmax+0.5*Ihf=10.85+0.5*2.17=11.94A7，那么升压电感最小值为Lmin=(0.25*Uout)/(Ihf*fs)=(0.25*400)/(2.17*65KHz)=709uH8，输出电容最小值为：Cmin=Iout/(3.14*2*fac*Voutp-p)=1.5/(3.14*2*50*10)=477.7uF，实际电路中还要考虑hold up时间，所以电容容量可能需要重新按照hold up的时间要求来重新计算。实际的电路中，我用了1320uF，4只330uF的并联。
标签： 变压器
上传时间： 2021-12-04
上传用户：wky20090436
Texas instruments MIPI DSI to eDP converter. Input supports 2 channel, 4 lanes each, up to 1.5GBit/s. Total input bandwidth is 12Gbit/s. Output eDP 1.4 1,2 or 4 lanes up to 5.4Gbit/s. output up to 4096x2304 60fps.
上传时间： 2021-12-22
上传用户：lipengxu
一、设计目的1、学习基本理论在实践中综合运用的初步经验，掌握模拟电路设计的基本方法、设计步骤，培养综合设计与调试能力。2、学会直流稳压电源的设计方法和性能指标测试方法。3、培养实践技能，提高分析和解决实际问题的能力。二、设计任务及要求1、设计一个连续可调的直流稳压电源，主要技术指标要求：① 输入（AC）：U=220V，f=50HZ；② 输出直流电压：U0=9→12v；③ 输出电流：I0<=1A；④ 纹波电压：Up-p<30mV；2、设计电路结构，选择电路元件，计算确定元件参数，画出实用原理电路图。3、自拟实验方法、步骤及数据表格，提出测试所需仪器及元器件的规格、数量。4、在实验室MultiSIM8-8330软件上画出电路图，并仿真和调试，并测试其主要性能参数。
标签： 直流稳压电源
上传时间： 2021-12-23
上传用户：lipengxu
1. Scope ......................................................................................................................................................................... 12. DDR4 SDRAM Package Pinout and Addressing ....................................................................................................... 22.1 DDR4 SDRAM Row for X4,X8 and X16 ................................................................................................................22.2 DDR4 SDRAM Ball Pitch........................................................................................................................................22.3 DDR4 SDRAM Columns for X4,X8 and X16 ..........................................................................................................22.4 DDR4 SDRAM X4/8 Ballout using MO-207......................................................................................................... 22.5 DDR4 SDRAM X16 Ballout using MO-207.............................................................................................................32.6 Pinout Description ..................................................................................................................................................52.7 DDR4 SDRAM Addressing.....................................................................................................................................73. Functional Description ...............................................................................................................................................83.1 Simplified State Diagram ....................................................................................................................................83.2 Basic Functionality..................................................................................................................................................93.3 RESET and Initialization Procedure .....................................................................................................................103.3.1 Power-up Initialization Sequence .............................................................................................................103.3.2 Reset Initialization with Stable Power ......................................................................................................113.4 Register Definition ................................................................................................................................................123.4.1 Programming the mode registers .............................................................................................................123.5 Mode Register ......................................................................................................................................................134. DDR4 SDRAM Command Description and Operation ............................................................................................. 244.1 Command Truth Table ..........................................................................................................................................244.2 CKE Truth Table ...................................................................................................................................................254.3 Burst Length, Type and Order ..............................................................................................................................264.3.1 BL8 Burst order with CRC Enabled .........................................................................................................264.4 DLL-off Mode & DLL on/off Switching procedure ................................................................................................274.4.1 DLL on/off switching procedure ...............................................................................................................274.4.2 DLL “on” to DLL “off” Procedure ..............................................................................................................274.4.3 DLL “off” to DLL “on” Procedure ..............................................................................................................284.5 DLL-off Mode........................................................................................................................................................294.6 Input Clock Frequency Change ............................................................................................................................304.7 Write Leveling.......................................................................................................................................................314.7.1 DRAM setting for write leveling & DRAM termination function in that mode ............................................324.7.2 Procedure Description .............................................................................................................................334.7.3 Write Leveling Mode Exit .........................................................................................................................34
标签： DDR4
上传时间： 2022-01-09
上传用户：13692533910
STM32L053C8T6数据手册Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 125 °C temperature range – 0.27 µA Standby mode (2 wakeup pins) – 0.4 µA Stop mode (16 wakeup lines) – 0.8 µA Stop mode + RTC + 8 KB RAM retention – 139 µA/MHz Run mode at 32 MHz – 3.5 µs wakeup time (from RAM) – 5 µs wakeup time (from Flash) • Core: ARM® 32-bit Cortex®-M0+ with MPU – From 32 kHz up to 32 MHz max. – 0.95 DMIPS/MHz • Reset and supply management – Ultra-safe, low-power BOR (brownout reset) with 5 selectable thresholds – Ultralow power POR/PDR – Programmable voltage detector (PVD) • Clock sources – 1 to 25 MHz crystal oscillator – 32 kHz oscillator for RTC with calibration – High speed internal 16 MHz factory-trimmed RC (+/- 1%) – Internal low-power 37 kHz RC – Internal multispeed low-power 65 kHz to 4.2 MHz RC – PLL for CPU clock • Pre-programmed bootloader – USART, SPI supported • Development support – Serial wire debug supported • Up to 51 fast I/Os (45 I/Os 5V tolerant) • Memories – Up to 64 KB Flash with ECC – 8KB RAM – 2 KB of data EEPROM with ECC – 20-byte backup register
标签： stm32l053c8t6
上传时间： 2022-02-06
上传用户：突破自我
The PW5410B is a low noise, constant frequency (1.2MHz) switched capacitor voltage doubler. Itproduces a regulated output voltage from 1.8V to 5V input with up to 100mA of output current. Lowexternal parts count (one flying capacitor and two small bypass capacitors at VIN and VOUT) makethe PW5410B ideally suited for small, battery-powered applications
标签： pw5410
上传时间： 2022-02-11
上传用户：wangshoupeng199
The PW5410A is a low noise, constant frequency (1.2MHz) switched capacitor voltage doubler. Itproduces a regulated output voltage from 2.7V to 5V input with up to 250mA of output current. Lowexternal parts count (one flying capacitor and two small bypass capacitors at VIN and VOUT) makethe PW5410A ideally suited for small, battery-powered applications
标签： pw5410
上传时间： 2022-02-11
上传用户：nicholas28
The PW5200A/ PW5200C is high efficiency synchronous, PWM step-up DC/DC converters optimizedto provide a high efficient solution to medium power systems. The devices work with a 1.4MHz fixedfrequency switching. These features minimize overall solution footprint by allowing the use of tiny,low profile inductors and ceramic capacitors. Automatic PWM/PFM mode switching at light loadsaves power and improves efficiency
标签： pw5200
上传时间： 2022-02-11
上传用户：joshau007
