These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specifi ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.
标签： enhancement transistors P-Channel are
上传时间： 2017-02-17
上传用户：aeiouetla
Recently a new technology for high voltage Power MOSFETshas been introduced – the CoolMOS™ . Based on thenew device concept of charge compensation the RDS(on) areaproduct for e.g. 600V transistors has been reduced by afactor of 5. The devices show no bipolar current contributionlike the well known tail current observed during the turn-offphase of IGBTs. CoolMOS™ virtually combines the lowswitching losses of a MOSFET with the on-state losses of anIGBT.
标签： COOLMOS
上传时间： 2013-11-14
上传用户：zhyiroy
Portable, battery-powered operation of electronic apparatushas become increasingly desirable. Medical, remotedata acquisition, power monitoring and other applicationsare good candidates for battery operation. In some circumstances,due to space, power or reliability considerations,it is preferable to operate the circuitry from a single 1.5Vcell. Unfortunately, a 1.5V supply eliminates almost alllinear ICs as design candidates. In fact, the LM10 opamp-reference and the LT®1017/LT1018 comparators arethe only IC gain blocks fully specifi ed for 1.5V operation.Further complications are presented by the 600mV dropof silicon transistors and diodes. This limitation consumesa substantial portion of available supply range, makingcircuit design diffi cult. Additionally, any circuit designedfor 1.5V operation must function at end-of-life batteryvoltage, typically 1.3V. (See Box Section, “Componentsfor 1.5V Operation.”)
标签： Circuitry Operation Single 1017
上传时间： 2013-12-20
上传用户：Wwill
OPTOELECTRONICS CIRCUIT COLLECTION AVALANCHE PHOTODIODE BIAS SUPPLY 1Provides an output voltage of 0V to +80V for reverse biasingan avalanche photodiode to control its gain. This circuit canalso be reconfigured to supply a 0V to –80V output.LINEAR TEC DRIVER–1This is a bridge-tied load (BTL) linear amplifier for drivinga thermoelectric cooler (TEC). It operates on a single +5Vsupply and can drive ±2A into a common TEC.LINEAR TEC DRIVER–2This is very similar to DRIVER–1 but its power output stagewas modified to operate from a single +3.3V supply in orderto increase its efficiency. Driving this amplifier from astandard +2.5V referenced signal causes the output transistorsto have unequal power dissipation.LINEAR TEC DRIVER–3This BTL TEC driver power output stage achieves very highefficiency by swinging very close to its supply rails, ±2.5V.This driver can also drive ±2A into a common TEC. Operationis shown with the power output stage operating on±1.5V supplies. Under these conditions, this linear amplifiercan achieve very high efficiency. Application ReportThe following collection of analog circuits may be useful in electro-optics applications such as optical networkingsystems. This page summarizes their salient characteristics.
上传时间： 2013-10-27
上传用户：落花无痕
Abstract: We can apply a BiCMOS integrated circuit with only resistors and no transistors to solve adifficult design problem. The mythically perfect operational amplifier's gain and temperature coefficient aredependent on external resistor values. Maxim precision resistor arrays are manufactured together on asingle die and then automatically trimmed, to ensure close ratio matching. This guarantees that theoperational amplifier (op amp) gain and temperature coefficient are predictable and reliable, even withlarge production volumes.
上传时间： 2014-11-30
上传用户：ynzfm
The power appetite of large TFT-LCDs appears to beinsatiable. Power supplies must feed increasing numbersof transistors and improved display resolutions, and doso without taking much space.
上传时间： 2014-12-24
上传用户：小小小熊
The above title is not happenstance and was arrived at afterconsiderable deliberation. As a linear IC manufacturer, it isour goal to encourage users to design and build switchingregulators. A problem is that while everyone agrees thatworking switching regulators are a good thing, everyonealso agrees that they are difficult to get working. Switchingregulators, with their high efficiency and small size, areincreasingly desirable as overall package sizes shrink.Unfortunately, switching regulators are also one of themost difficult linear circuits to design. Mysterious modes,sudden, seemingly inexplicable failures, peculiar regulationcharacteristics and just plain explosions are commonoccurrences. Diodes conduct the wrong way. Things gethot that shouldn’t. Capacitors act like resistors, fusesdon’t blow and transistors do. The output is at ground, andthe ground terminal shows volts of noise.
标签： Regulators Switching Poets for
上传时间： 2013-12-19
上传用户：奇奇奔奔
Portable, battery-powered operation of electronic apparatushas become increasingly desirable. Medical, remotedata acquisition, power monitoring and other applicationsare good candidates for batteryoperation. In some circumstances,due to space, power or reliability considerations,it is preferable to operate the circuitry from a single 1.5Vcell. Unfortunately, a 1.5V supply eliminates almost alllinear ICs as design candidates. In fact, the LM10 opamp-reference and the LT®1017/LT1018 comparators arethe only IC gain blocks fully specifi ed for 1.5V operation.Further complications are presented by the 600mV dropof silicon transistors and diodes. This limitation consumesa substantial portion of available supply range, makingcircuit design diffi cult. Additionally, any circuit designedfor 1.5V operation mustfunction at end-of-life batteryvoltage, typically 1.3V. (See Box Section, “Componentsfor 1.5V Operation.”)
标签： Circuitry Operation Single Cell
上传时间： 2013-10-30
上传用户：hz07104032
Introduction to Xilinx Packaging Electronic packages are interconnectable housings for semiconductor devices. The major functions of the electronic packages are to provide electrical interconnections between the IC and the board and to efficiently remove heat generated by the device. Feature sizes are constantly shrinking, resulting in increased number of transistors being packed into the device. Today's submicron technology is also enabling large-scale functional integration and system-on-a-chip solutions. In order to keep pace with these new advancements in silicon technologies, semiconductor packages have also evolved to provide improved device functionality and performance. Feature size at the device level is driving package feature sizes down to the design rules of the early transistors. To meet these demands, electronic packages must be flexible to address high pin counts, reduced pitch and form factor requirements. At the same time,packages must be reliable and cost effective.
上传时间： 2013-10-22
上传用户：ztj182002
Agilent AN 154 S-Parameter Design Application Note S参数的设计与应用 The need for new high-frequency, solid-state circuitdesign techniques has been recognized both by microwaveengineers and circuit designers. These engineersare being asked to design solid state circuitsthat will operate at higher and higher frequencies.The development of microwave transistors andAgilent Technologies’ network analysis instrumentationsystems that permit complete network characterizationin the microwave frequency rangehave greatly assisted these engineers in their work.The Agilent Microwave Division’s lab staff hasdeveloped a high frequency circuit design seminarto assist their counterparts in R&D labs throughoutthe world. This seminar has been presentedin a number of locations in the United States andEurope.From the experience gained in presenting this originalseminar, we have developed a four-part videotape, S-Parameter Design Seminar. While the technologyof high frequency circuit design is everchanging, the concepts upon which this technologyhas been built are relatively invariant.The content of the S-Parameter Design Seminar isas follows:
标签： S参数
上传时间： 2013-12-19
上传用户：aa54
