国际会议上关于磨损平衡的一片论文：A Stackable Wear-Leveling Module for Linux-Based Flash File Systems
标签： Wear-Leveling Linux-Based Stackable Systems
上传时间： 2014-08-15
上传用户：Pzj
是PDF文档，是台湾一大学教授的论文，主要是讲NAND FLASH Wear leveling 算法的理论性文章，上传上来是提供大家一起学习！
标签： 文档
上传时间： 2016-10-13
上传用户：evil
一． eMMC的概述eMMC (Embedded MultiMedia Card) 为MMC协会所订立的内嵌式存储器标准规格，主要是针对手机产品为主。eMMC的一个明显优势是在封装中集成了一个控制器， 它提供标准接口并管理闪存， 使得手机厂商就能专注于产品开发的其它部分，并缩短向市场推出产品的时间。这些特点对于希望通过缩小光刻尺寸和降低成本的NAND供应商来说，具有同样的重要性。二． eMMC的优点eMMC目前是最当红的移动设备本地存储解决方案，目的在于简化手机存储器的设计，由于NAND Flash 芯片的不同厂牌包括三星、KingMax、东芝(Toshiba) 或海力士(Hynix) 、美光(Micron) 等，入时，都需要根据每家公司的产品和技术特性来重新设计，过去并没有哪个技术能够通用所有厂牌的NAND Flash 芯片。而每次NAND Flash 制程技术改朝换代，包括70 纳米演进至50 纳米，再演进至40 纳米或30 纳米制程技术，手机客户也都要重新设计， 但半导体产品每1 年制程技术都会推陈出新， 存储器问题也拖累手机新机种推出的速度，因此像eMMC这种把所有存储器和管理NAND Flash 的控制芯片都包在1 颗MCP上的概念，逐渐风行起来。eMMC的设计概念，就是为了简化手机内存储器的使用，将NAND Flash 芯片和控制芯片设计成1 颗MCP芯片，手机客户只需要采购eMMC芯片，放进新手机中，不需处理其它繁复的NAND Flash 兼容性和管理问题，最大优点是缩短新产品的上市周期和研发成本，加速产品的推陈出新速度。闪存Flash 的制程和技术变化很快，特别是TLC 技术和制程下降到20nm阶段后，对Flash 的管理是个巨大挑战，使用eMMC产品，主芯片厂商和客户就无需关注Flash 内部的制成和产品变化，只要通过eMMC的标准接口来管理闪存就可以了。这样可以大大的降低产品开发的难度和加快产品上市时间。eMMC可以很好的解决对MLC 和TLC 的管理， ECC 除错机制(Error Correcting Code) 、区块管理(BlockManagement)、平均抹写储存区块技术 (Wear Leveling) 、区块管理（ Command Managemen）t，低功耗管理等。eMMC核心优点在于生产厂商可节省许多管理NAND Flash 芯片的时间，不必关心NAND Flash 芯片的制程技术演变和产品更新换代，也不必考虑到底是采用哪家的NAND Flash 闪存芯片，如此， eMMC可以加速产品上市的时间，保证产品的稳定性和一致性。
标签： emmc
上传时间： 2022-06-20
上传用户：jiabin
hard wear...............
上传时间： 2013-12-23
上传用户：er1219
对于沥青混凝土摊铺机自动找平控制系统来说，数字式控制系统的研制是目前的一个方向。介绍了一种基于CAN总线的数字式自动找平控制系统。该系统以CAN总线作为通信方式，PWM控制信号通过C8051F040单片机内部PCA可编程计数器阵列产生，并具有结构简单、信号稳定、实时性强、易扩展的特点。通过硬件实现和系统运行达到了比较理想的控制效果，验证了系统的可行性。 Abstract: A digital auto-leveling control system based on CAN Bus is introduced.It uses CAN Bus as the method of communication and creates PWM signals by programmable counter array in C8051F040 microcontroller. The system is simple, stable, real-time and expansive.
上传时间： 2013-10-09
上传用户：ligi201200
Because of the poor observability of Inertial Navigation System on stationary base, the estimation error of the azimuth will converge very slowly in initial alignment by means of Kalmari filtering, and making the time initial alignment is longer. In this paper, a fast estimation method of the azimuth error is creatively proposed for the initial alignment of INS on stationary base. On the basis of the the fast convergence of the leveling error, the azimuth error can be directly calculated. By means of this fast initial alignment method, the time of initial alignment is reduced greatly. The computer simulation results illustrate the efficiency of the method.
标签： observability Navigation estimation stationary
上传时间： 2014-01-03
上传用户：wuyuying
Evaluation of friction mechanisms and wear rates on rubber tire materials by low-cost laboratory tests
上传时间： 2016-05-16
上传用户：zz17110439
Battery systems for energy storage are among the most relevant technologies of the 21 st century. They – in particular modern lithium-ion batteries (LIB) – are enablers for the market success of electric vehicles (EV) as well as for stationary energy storage solutions for balancing fluctuations in electricity grids resulting from the integrationofrenewableenergysourceswithvolatilesupply 1 .BothEVandstationary storage solutions are important because they foster the transition from the usage of fossil energy carriers towards cleaner renewable energy sources. Furthermore, EV cause less local air pollution and noise emissions compared to conventional combustion engine vehicles resulting in better air quality especially in urban areas. Unfortunately, to this day, various technological and economic challenges impede a broad application of batteries for EV as well as for large scale energy storage and load leveling in electricity grids.
标签： Multiscale Simulation Approach
上传时间： 2020-06-07
上传用户：shancjb
1. Scope ......................................................................................................................................................................... 12. DDR4 SDRAM Package Pinout and Addressing ....................................................................................................... 22.1 DDR4 SDRAM Row for X4,X8 and X16 ................................................................................................................22.2 DDR4 SDRAM Ball Pitch........................................................................................................................................22.3 DDR4 SDRAM Columns for X4,X8 and X16 ..........................................................................................................22.4 DDR4 SDRAM X4/8 Ballout using MO-207......................................................................................................... 22.5 DDR4 SDRAM X16 Ballout using MO-207.............................................................................................................32.6 Pinout Description ..................................................................................................................................................52.7 DDR4 SDRAM Addressing.....................................................................................................................................73. Functional Description ...............................................................................................................................................83.1 Simplified State Diagram ....................................................................................................................................83.2 Basic Functionality..................................................................................................................................................93.3 RESET and Initialization Procedure .....................................................................................................................103.3.1 Power-up Initialization Sequence .............................................................................................................103.3.2 Reset Initialization with Stable Power ......................................................................................................113.4 Register Definition ................................................................................................................................................123.4.1 Programming the mode registers .............................................................................................................123.5 Mode Register ......................................................................................................................................................134. DDR4 SDRAM Command Description and Operation ............................................................................................. 244.1 Command Truth Table ..........................................................................................................................................244.2 CKE Truth Table ...................................................................................................................................................254.3 Burst Length, Type and Order ..............................................................................................................................264.3.1 BL8 Burst order with CRC Enabled .........................................................................................................264.4 DLL-off Mode & DLL on/off Switching procedure ................................................................................................274.4.1 DLL on/off switching procedure ...............................................................................................................274.4.2 DLL “on” to DLL “off” Procedure ..............................................................................................................274.4.3 DLL “off” to DLL “on” Procedure ..............................................................................................................284.5 DLL-off Mode........................................................................................................................................................294.6 Input Clock Frequency Change ............................................................................................................................304.7 Write Leveling.......................................................................................................................................................314.7.1 DRAM setting for write leveling & DRAM termination function in that mode ............................................324.7.2 Procedure Description .............................................................................................................................334.7.3 Write Leveling Mode Exit .........................................................................................................................34
标签： DDR4
上传时间： 2022-01-09
上传用户：
3.DDR布线细节i.MX6DDR的布线，可以将所有信号分成3组：数据线组、地址线组和控制线组，每组各自设置自己的布线规则，但同时也要考虑组与组之间的规则。3.1数据线的交换在DDR3的布线中，可以根据实际情况交换数据线的线序，但必须保证是以字节为单位（数据0~7间是允许交换线序，跨字节是不允许的），这样可以简化设计。■布线尽量简短，减少过孔数量。■布线时避免改变走线参考层面。■数据线线序，推荐DO、D8、D16、D24、D32、D40、D48、D56不要改变，其它的数据线可以在字节内自由调换（see the“Write Leveling"sectioninJESD79-3E■DQS和DQM不能调换，必须在相应通道。3.2DDR3（64bits）T型拓扑介绍当设计采用T型拓扑结构，请确认以下信息。■布线规则见上文表2。■终端电阻可以省略。■布线长度的控制。DDR数量限制在4片以下。
标签： ddr3
上传时间： 2022-07-05
上传用户：
