delphi做的系统强制重启程序。 服务器死机怎么办？用该软件重启。 1.病毒感染:一般表现,起初能够正常运行,某天突然运行速度变慢,工作效率急剧下降,出现频繁的死机。这时首先进行全面查毒、杀毒,以确定机器是否已经感染了病毒。 2.有些软件编程不规范,不能排在第一加载和运行,而要放在最后运行,否则会引起系统管理的混乱。测试版软件在某方面不够稳定,使用后可能会导致系统无法启动,所以最好少用。 3.在内存较小的情况下,运行占用内存较大的应用程序,容易出现死机。建议在运行程序时应及时重启系统。
标签： delphi
上传时间： 2021-07-27
上传用户：风云
USB_MICRO USB_MNI USB扁口座 TF卡槽 SOIC8 LQFP32芯片ALTIUM 库（3D PCB封装库）, 3D封装，已在项目中使用，可以做为你的设计参考。详细列表如下：Component Count : 94Component Name-----------------------------------------------32165032-8MHZAMS1117ANT2AntennaBATbuzzerCapCAP-0805CAP-3216CD32Crystal Oscillator 3225HC-06KEY-2PINLED-0603LQFP-100LQFP32LQFP44LQFP44 10X10_LLQFP44 10X10_MLQFP44 10X10_NLQFP48LQFP48 7X7_LLQFP48 7X7_MLQFP48 7X7_NLQFP64 10x10_LLQFP64 10x10_MLQFP64 10x10_NMagMOTONRF24L01NRF24L01-modeOLED-0.96-PIN7QFN20_4X4QFN24_4X4QFN32_5X5remoteRES-0603RFX2401CRPSG90SH1.0mm-4PINSH1.0MM-5PINSH1.0mm-6PINSMA-ANTSMA/DO-214SOIC-8SOP16SOT-23-3SOT-23-5SOT-89SOT-223SPL06-001STM32F030C8T6STM32F030F4P6STM32F103C8T6straight-1x2pinstraight-1x2pin - duplicatestraight-1x2pin - duplicate1straight-1x3pinstraight-1x3pin - duplicatestraight-1x3pin - duplicate1straight-1x4pinstraight-1x4pin - duplicatestraight-1x5pinstraight-1x8pinstraight-1x8pin - duplicatestraight-2x2pinstraight-2x3pinstraight-2x4pinstraight-2x5pinSW-NO/OFF-PIN3SW-SMD1SW-SMD2SWITCH-DIP-6*6*7SX1308TF-CARDTO-263-5TP4056USBUSB_MICROUSB_MNI_BUSB-MICRO-1winding_1x2pinwinding_1x3pinwinding_1x4pinwinding_1x5pinwinding_1x8pinwinding_2x2pinwinding_2x3pinwinding_2x4pinwinding_2x5pinXTAL-5070/SMDXTAL-QC49/SMD
标签： usb
上传时间： 2021-12-02
上传用户：aben
采用的PLC是西门子S7-200系列，仿真编程软件为STEP7-Micro。在初始状态，容器是空的，各阀门皆关闭，Y1、Y2、Y3灯皆暗和M搅拌机均为OFF，液面传感器L1、L2、L3为关，加热器H为关。若要启动操作，按下启动按钮(I0.0)，开始下列操作： （1）Y1、Y2为ON，液体A和B同时注入容器，当液面达到L2时，L2为ON，使Y1、Y2为OFF，Y3为ON，即关闭Y1、Y2阀门，打开液体C的阀门Y3。 （2）液面达到L1时，Y3为OFF，M为ON，即关闭阀门Y3，电动机起动开始搅拌。 （3）经10S搅匀后，M为OFF，停止搅拌，H为ON，加热器开始加热。 4、当混合液体温度达到某一指定值时，T为ON，H为OFF，停止加热，使电磁阀Y4为ON，开始放出混合液体。 （4）当液体高度降为L3后，L3从ON到OFF，再经5S，容器放空，Y4为OFF，开始下一周期。当按下停止按钮后，在当前的混合操作处理完毕后，停止操作，停在初始状态。
上传时间： 2021-12-31
上传用户：XuVshu
1. Scope ......................................................................................................................................................................... 12. DDR4 SDRAM Package Pinout and Addressing ....................................................................................................... 22.1 DDR4 SDRAM Row for X4,X8 and X16 ................................................................................................................22.2 DDR4 SDRAM Ball Pitch........................................................................................................................................22.3 DDR4 SDRAM Columns for X4,X8 and X16 ..........................................................................................................22.4 DDR4 SDRAM X4/8 Ballout using MO-207......................................................................................................... 22.5 DDR4 SDRAM X16 Ballout using MO-207.............................................................................................................32.6 Pinout Description ..................................................................................................................................................52.7 DDR4 SDRAM Addressing.....................................................................................................................................73. Functional Description ...............................................................................................................................................83.1 Simplified State Diagram ....................................................................................................................................83.2 Basic Functionality..................................................................................................................................................93.3 RESET and Initialization Procedure .....................................................................................................................103.3.1 Power-up Initialization Sequence .............................................................................................................103.3.2 Reset Initialization with Stable Power ......................................................................................................113.4 Register Definition ................................................................................................................................................123.4.1 Programming the mode registers .............................................................................................................123.5 Mode Register ......................................................................................................................................................134. DDR4 SDRAM Command Description and Operation ............................................................................................. 244.1 Command Truth Table ..........................................................................................................................................244.2 CKE Truth Table ...................................................................................................................................................254.3 Burst Length, Type and Order ..............................................................................................................................264.3.1 BL8 Burst order with CRC Enabled .........................................................................................................264.4 DLL-off Mode & DLL on/off Switching procedure ................................................................................................274.4.1 DLL on/off switching procedure ...............................................................................................................274.4.2 DLL “on” to DLL “off” Procedure ..............................................................................................................274.4.3 DLL “off” to DLL “on” Procedure ..............................................................................................................284.5 DLL-off Mode........................................................................................................................................................294.6 Input Clock Frequency Change ............................................................................................................................304.7 Write Leveling.......................................................................................................................................................314.7.1 DRAM setting for write leveling & DRAM termination function in that mode ............................................324.7.2 Procedure Description .............................................................................................................................334.7.3 Write Leveling Mode Exit .........................................................................................................................34
标签： DDR4
上传时间： 2022-01-09
上传用户：13692533910
The PW2601 is a charger front-end integrated circuit designed to provide protection to Li-ionbatteries from failures of charging circuitry. The device monitors the input voltage, battery voltageand the charging current to make sure all three parameters are operated in normal range. Thedevice will switch off internal MOSFET to disconnect IN to OUT to protect load when any of inputvoltage, output current exceeds the threshold. The Over temperature protection (OTP) functionmonitors chip temperature to protect the device. The PW2601 also can protect the system’sbattery from being over charged by monitors the battery voltage continuously. The deviceoperates like a linear regulator, maintaining a 5.1V output with input voltages up to the input overvoltage threshold.The PW2601 is available in DFN-2x2-8L package. Standard products are Pb-free and Halogenfree
标签： pw2601
上传时间： 2022-02-11
上传用户：kid1423
Single chip TFT-LCD Controller/Driver with On-chip Frame Memory (FM) Display Resolution: 240*RGB (H) *320(V) Frame Memory Size: 240 x 320 x 18-bit = 1,382,400 bits LCD Driver Output Circuits- Source Outputs: 240 RGB Channels- Gate Outputs: 320 Channels- Common Electrode Output Display Colors (Color Mode)- Full Color: 262K, RGB=(666) max., Idle Mode Off- Color Reduce: 8-color, RGB=(111), Idle Mode On Programmable Pixel Color Format (Color Depth) for Various Display Data input Format- 12-bit/pixel: RGB=(444)- 16-bit/pixel: RGB=(565)- 18-bit/pixel: RGB=(666) MCU Interface- Parallel 8080-series MCU Interface (8-bit, 9-bit, 16-bit & 18-bit)- 6/16/18 RGB Interface(VSYNC, HSYNC, DOTCLK, ENABLE, DB[17:0])- Serial Peripheral Interface(SPI Interface)- VSYNC Interface
上传时间： 2022-03-04
上传用户：wwa875
基于药物治疗在临床治疗中的重要性,分析目前服药提醒装置存在的不足,以STM32F103VET6单片机为控制核心,设计了一种多功能电子药箱。该系统包括显示模块、语音模块和数据存储模块。显示模块通过触摸屏电路和LED指示灯电路,与语音模块相配合,实现了服药提醒及指导的功能;数据存储模块通过EEPROM存储电路,能够实现掉电时服药信息不丢失的功能。并且为了实现电子药箱的智能化控制,开发了手机APP,两者之间可通过WIFI进行数据通信。经测试,该药箱能够有效地帮助慢性病患者按时、定量、正确服用药物,适合在家庭中推广使用,具有较高的应用价值和实践意义。Based on the importance of drug therapy in clinical treatment, this paper analyzes the shortcomings of current drug reminder devices, and designs a multi-function electronic medicine box with STM32 F103 VET6 microcontroller as the control core. The system includes a display module, a voice module, and a data storage module. The display module cooperates with the voice module through the touch screen circuit and the LED indicator circuit to realize the function of reminding and guiding the medicine;the data storage module can realize the function of not losing the medication information when the power is off through the EEPROM storage circuit.After testing, the medicine box can effectively help chronic diseases patients to take drugs on time, in a quantitative and correct manner,and is suitable for popularization in the family, and has high application value and practical significance.
标签： 电子药箱
上传时间： 2022-03-27
上传用户：jimmy950583
数字示波器功能强大,使用方便,但是价格相对昂贵。本文以Ti的MSP430F5529为主控器,以Altera公司的EP2C5T144C8 FPGA器件为逻辑控制部件设计数字示波器。模拟信号经程控放大、整形电路后形成方波信号送至FPGA测频,根据频率值选择采用片上及片外高速AD分段采样。FPGA控制片外AD采样并将数据输入到FIFO模块中缓存,由单片机进行频谱分析。测试表明:简易示波器可以实现自动选档、多采样率采样、高精度测频及频谱分析等功能。Digital oscilloscope is powerful and easy to use, but also expensive. The research group designed a low-cost digital oscilloscope, the chip of MSP430F5529 of TI is chosen as the main controller and the device of EP2C5T144C8 of Altera company is used as the logic control unit. Analog signal enter the programmable amplifier circuit, shaping circuit and other pre-processing circuit. The shaped rectangular wave signal is sent to FPGA for measure the frequency. According to the frequency value to select AD on-chip or off-chip high-speed AD for sampling. FPGA controls the off-chip AD sampling and buffers AD data by FIFO module. The single chip microcomputer receives the data, and do FFT for spectrum analysis. The test shows that the simple oscilloscope can realize automatic gain selection, sampling at different sampling rates, high precision frequency measurement and spectrum analysis.
上传时间： 2022-03-27
上传用户：突破自我
IC-Ucc28950改进的相移全桥控制设计UcC28950是T公司进一步改进的相移全桥控制C，它比原有标准型UCC2895主要改进为Zvs能力范围加宽，对二次侧同步整流直接控制，提高了轻载空载转换效率，而且此时可以ON/OFF控制同步整流成为绿色产品。既可以作电流型控制，也可以作电压型控制。增加了闭环软启动及使能功能。低启动电流，逐个周期式限流过流保护，开关频率可达1MHz UCC28950基本应用电路如图1所示，内部等效方框电路如图2所示。*启动中的保护逻辑UCC28950启动前应该首先满足下列条件：*VDD电压要超过UvLo阈值，73V*5V基准电压已经实现*芯片结温低于140℃。*软启动电容上的电压不低于0.55V。如果满足上述条件，一个内部使能信号EN将产生出来，开始软启动过程。软启动期间的占空比，由Ss端电压定义，且不会低于由Twm设置的占空比，或由逐个周期电流限制电路决定的负载条件电压基准精确的（±1.5%5V基准电压，具有短路保护，支持内部电路，并能提供20mA外部输出电流，其用于设置DCDC变换器参数，放置一个低ESR，ESL瓷介电容（1uF-2.2uF旁路去耦，从此端接到GND，并紧靠端子，以获得最佳性能。唯一的关断特性发生在C的VDD进入UVLo状态。*误差放大器（EA+EA，COMP）误差放大器有两个未提交的输入端，EA+和EA-。它具有3MHz带宽具有柔性的闭环反馈环。EA+为同相端，EA-为反向端。COMP为输出端输入电压共模范围保证在0.5V-3.6V。误差放大器的输出在内部接到pWM比较器的同相输入端，误差放大器的输出范围为0.25V4.25V，远超出PwM比较器输入上斜信号范围，其从0.8v-2.8V。软启动信号作为附加的放大器的同相输入，当误差放大器的两个同相输入为低，是支配性的输入，而且设置的占空比是误差放大器输出信号与内部斜波相比较后放在PWM比较器的输入处。
标签： ucc2895
上传时间： 2022-03-31
上传用户：hao123
设计功率MOSFET驱动电路时需重点考虑寄生参数对电路的影响。米勒电容作为MOSFET器件的一项重要参数,在驱动电路的设计时需要重点关注。重点观察了MOSFET的开通和关断过程中栅极电压、漏源极电压和漏源极电流的变化过程,并分析了米勒电容、寄生电感等寄生参数对漏源极电压和漏源极电流的影响。分析了栅极电压在米勒平台附近产生振荡的原因,并提出了抑制措施,对功率MOSFET的驱动设计具有一定的指导意义。When designing the drive circuit of power MOSFET,the influence of parasitic parameters on the circuit should be concerned.As an important parameter of MOSFET device,Miller capacitance should be considered in the design of drive circuit.The variation of gate voltage,drain source voltage and drain source current during the turn-on and turn-off of MOSFET were observed.The influences of parasitic parameters such as Miller capacitance and parasitic inductance on drain source voltage and drain source current were analyzed.The reasons of gate voltage oscillation nearby Miller plateau were analyzed,and the restraining measures were put forward.This research was instructive for the drive design of power MOSFET.
标签： mosfet
上传时间： 2022-04-02
上传用户：默默
