The MAX17600–MAX17605 devices are high-speedMOSFET drivers capable of sinking /sourcing 4A peakcurrents. The devices have various inverting and noninvertingpart options that provide greater flexibility incontrolling the MOSFET. The devices have internal logiccircuitry that prevents shoot-through during output-statchanges. The logic inputs are protected against voltagespikes up to +14V, regardless of VDD voltage. Propagationdelay time is minimized and matched between the dualchannels. The devices have very fast switching time,combined with short propagation delays (12ns typ),making them ideal for high-frequency circuits. Thedevices operate from a +4V to +14V single powersupply and typically consume 1mA of supply current.The MAX17600/MAX17601 have standard TTLinput logic levels, while the MAX17603 /MAX17604/MAX17605 have CMOS-like high-noise margin (HNM)input logic levels. The MAX17600/MAX17603 are dualinverting input drivers, the MAX17601/MAX17604 aredual noninverting input drivers, and the MAX17602 /MAX17605 devices have one noninverting and oneinverting input. These devices are provided with enablepins (ENA, ENB) for better control of driver operation.
上传时间: 2013-12-20
上传用户:zhangxin
华为工程师培训教材模拟电子共含有上下两册,是个不错的资源! ..
上传时间: 2014-12-23
上传用户:虫虫虫虫虫虫
Recently a new technology for high voltage Power MOSFETshas been introduced – the CoolMOS™ . Based on thenew device concept of charge compensation the RDS(on) areaproduct for e.g. 600V transistors has been reduced by afactor of 5. The devices show no bipolar current contributionlike the well known tail current observed during the turn-offphase of IGBTs. CoolMOS™ virtually combines the lowswitching losses of a MOSFET with the on-state losses of anIGBT.
标签: COOLMOS
上传时间: 2013-11-14
上传用户:zhyiroy
静电放电(ESD)是造成大多数电子元器件或电路系统破坏的主要因素。因此,电子产品中必须加上ESD保护,提供ESD电流泄放路径。电路模拟可应用于设计和优化新型ESD保护电路,使ESD保护器件的设计不再停留于旧的设计模式。文中讨论了器件由ESD引起的热效应的失效机理及研究热效应所使用的模型。介绍用于ESD模拟的软件,并对一些相关模拟结果进行了分析比较。
上传时间: 2013-11-05
上传用户:二十八号
数字水印作为一种防护技术,在数字产品的保护认证方面越发显得重要,成为当前计算机领域研究的热点问题之一。提出了一种在空域采用分块重复嵌入水印信息和HVS相结合的水印技术。实验结果说明,分块技术在空域的使用提高了水印的嵌入强度和降低计算复杂度,该算法在抵抗旋转、裁剪、缩放方面等有较强能力;水印算法与HVS技术的有效性相结合,数字水印具有很好的掩蔽性。
上传时间: 2013-10-23
上传用户:qwerasdf
下面是我对MOSFET及MOSFET驱动电路基础的一点总结,其中参考了一些资料,非全部原创。包括MOS管的介绍,特性,驱动以及应用电路。
上传时间: 2013-11-18
上传用户:文993
由于CMOS器件静电损伤90%是延迟失效,对整机应用的可靠性影响太大,因而有必要对CMOS器件进行抗静电措施。本文描述了CMOS器件受静电损伤的机理,从而对设计人员提出了几种在线路设计中如何抗静电,以保护CMOS器件不受损伤。
上传时间: 2013-11-05
上传用户:yupw24
This application note is an overview discussion of theLinear Technology SPICE macromodel library. It assumeslittle if any prior knowledge of this software library or itshistory. However, it does assume familiarity with both theanalog simulation program SPICE (or one of its manyderivatives), and modern day op amps, including bipolar,JFET, and MOSFET amplifier technologies
上传时间: 2013-11-14
上传用户:zhanditian
利用MOS场效应管(MOSFET),采取AB类推挽式功率放大方式,采用传输线变压器宽带匹配技术,设计出一种宽频带高功率射频脉冲功率放大器模块,其输出脉冲功率达1200W,工作频段0.6M~10MHz。调试及实用结果表明,该放大器工作稳定,性能可靠
上传时间: 2013-11-17
上传用户:waitingfy
为提高产品的可靠性、设计和功能,本文所有信息若有变更,恕不提前通知。本文信息也不作为厂商的任何承诺。 任何情况下,包括已警告了的各种损坏的可能性,厂商均不负责直接的、非直接的、特殊的或偶然的因不正当使用本产品或文件所造成的损坏。 本文包含受版权保护的信息,版权所有。未经厂商书面同意,不得以机械的、电子的或其它任何方式进行复制。
上传时间: 2013-10-14
上传用户:坏坏的华仔