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MOSFETS

  • FAIRCHILD MOSFETS 功率管 符号库

    FAIRCHILD MOSFETS 功率管 符号库

    标签: FAIRCHILD MOSFETS 功率管 符号

    上传时间: 2016-08-12

    上传用户:daguda

  • 66种FAIRCHILD_集成MOSFETS功率负载开关管参数手册

    66种FAIRCHILD_集成MOSFETS功率负载开关管参数手册

    标签: FAIRCHILD MOSFETS 集成 功率

    上传时间: 2016-08-12

    上传用户:qb1993225

  • 电平转换控制功率MOSFET

    Abstract: Some power architectures require the power supply sequencer (or system manager) to controldownstream power MOSFETS to allow power to flow into branch circuits. This application note explains howsystem power sequencing and level shifting can be accomplished using a low-voltage system manager

    标签: MOSFET 电平转换 控制 功率

    上传时间: 2013-11-02

    上传用户:wys0120

  • 100-15V TO 12V DCDC 原理图 PCB BOM表

    高的工作电压高达100V N双N沟道MOSFET同步驱动 The D810DCDC is a synchronous step-down switching regulator controller that can directly step-down voltages from up to 100V, making it ideal for telecom and automotive applications. The D810DCDC uses a constant on-time valley current control architecture to deliver very low duty cycles with accurate cycle-by-cycle current limit, without requiring a sense resistor. A precise internal reference provides 0.5% DC accuracy. A high bandwidth (25MHz) error amplifi er provides very fast line and load transient response. Large 1Ω gate drivers allow the D810DCDC to drive multiple MOSFETS for higher current applications. The operating frequency is selected by an external resistor and is compensated for variations in VIN and can also be synchronized to an external clock for switching-noise sensitive applications. Integrated bias control generates gate drive power from the input supply during start-up and when an output shortcircuit occurs, with the addition of a small external SOT23 MOSFET. When in regulation, power is derived from the output for higher effi ciency.

    标签: DCDC 100 12V BOM

    上传时间: 2013-10-24

    上传用户:wd450412225

  • DN387 级联7A点的负载单片降压转换器

      Easy-to-use and compact point-of-load power suppliesare necessary in systems with widely distributed, highcurrent, low voltage loads. The LTC®3415 provides acompact, simple and versatile solution. It includes a pairof integrated complementary power MOSFETS (32mΩtop and 25mΩ bottom) and requires no external senseresistor. A complete design requires an inductor andinput/output capacitors, and that’s it. The result is a fast,constant frequency, 7A current mode DC/DC switchingregulator.

    标签: 387 DN 级联 负载

    上传时间: 2013-10-18

    上传用户:avensy

  • These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are ad

    These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are advanced power MOSFETS designed, tested, and guaranteed to withstand a specifi ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETS are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.

    标签: enhancement transistors P-Channel are

    上传时间: 2017-02-17

    上传用户:aeiouetla

  • PW2312_2.0.pdf规格书下载

    The PW2312 is a high frequency, synchronous, rectified, step-down, switch-mode converter withinternal power MOSFETS. It offers a very compact solution to achieve a 1.5A peak output currentover a wide input supply range, with excellent load and line regulation.The PW2312 requires a minimal number of readily available, external components and is available ina space saving SOT23-6 package.

    标签: pw2312

    上传时间: 2022-02-11

    上传用户:qingfengchizhu

  • 8205A8_2.0.pdf规格书下载

    The PW8205A8TS is the highest performance trench N-ch MOSFETS with extreme high cell density,which provide excellent RDSON and gate charge for most of the small power switching and loadswitch applications. The meet the RoHS and Product requirement with full function reliabilityapproved .

    标签: 8205a8

    上传时间: 2022-02-14

    上传用户:wangshoupeng199

  • GL823K 原理图

    The GL823K integrates a high speed 8051 microprocessor and a high efficiency hardware engine for the best data transfer performance between USB and flash card interfaces. Its pin assignment design fits to card sockets to provide easier PCB layout. Inside the chip, it integrates 5V to 3.3V regulator, 3.3V to 1.8V regulator and power MOSFETS and it enables the function of on-chip clock source (OCCS) which means no external 12MHz XTAL is needed and that effectively reduces the total BOM cost.

    标签: GL823K SCH

    上传时间: 2022-04-27

    上传用户:qdxqdxqdxqdx

  • TMC5160步进驱动开发板电路图

    TMC5160将强大的步进电机驱动器和运动控制器集成在一块芯片上,将数字信息直接转换为平滑,精确,可靠的物理运动。外扩N沟道MOSFETS,每个线圈的电机电流可达20A,最大电压60V DC;使用起来非常简单,只需要目标位置即可。所有步进电机逻辑都在TMC5160内部运行 - 当驱动NEMA17到NEMA34和更大的电机时,不需要软件。通过行业标准SPI或步进/方向接口连接到主机微控制器,TMC5160执行所有实时位置和速度步进运动计算。而且TMC5160还支持ABN编码器输入。

    标签: tmc5160 步进驱动

    上传时间: 2022-07-02

    上传用户:ttalli