本代码是基于OFDM系统的一种转换域估计算法，有整个OFDM系统及改进的信道估计算法仿真。包括LS,MMSE,LMMSE,DFT,及改进后的DCT算法。
上传时间： 2014-01-25
上传用户：王者A
一个4*4mimo通信系统的仿真，qpsk调制，用mmse自适应解调，画出了ber曲线
上传时间： 2017-07-19
上传用户：lvzhr
自适应均衡器设计，采用分数间隔、判决反馈结构，MMSE算法。
标签： 均衡器
上传时间： 2014-01-13
上传用户：xinyuzhiqiwuwu
是一个对mimo连续相位调制系统的均衡程序，利用MMSE准则来实现。
上传时间： 2013-12-22
上传用户：aix008
用VB编写的一个小程序，使用GPRS连接WAP服务程序，具有GPRS功能的便携电话，并可支持图形、声音、游戏(jar/sic)下载，并有完整的日志功能。连接后会列出文件，选中文件可以删除、增加等。
上传时间： 2013-12-20
上传用户：Altman
ofdm通信系统信道估计，采用ls和mmse方法实现
上传时间： 2017-08-18
上传用户：chens000
ZF检测算法，MMSE以及ML,OSIC的检测算法仿真，MATLAB
上传时间： 2016-03-29
上传用户：ronaldoshiwo
松下2015年最新研究的适用于SiC，GaN等大功率器件的封装材料介绍
上传时间： 2016-04-20
上传用户：吉林辉仔
The recent developments in full duplex (FD) commu- nication promise doubling the capacity of cellular networks using self interference cancellation (SIC) techniques. FD small cells with device-to-device (D2D) communication links could achieve the expected capacity of the future cellular networks (5G). In this work, we consider joint scheduling and dynamic power algorithm (DPA) for a single cell FD small cell network with D2D links (D2DLs). We formulate the optimal user selection and power control as a non-linear programming (NLP) optimization problem to get the optimal user scheduling and transmission power in a given TTI. Our numerical results show that using DPA gives better overall throughput performance than full power transmission algorithm (FPA). Also, simultaneous transmissions (combination of uplink (UL), downlink (DL), and D2D occur 80% of the time thereby increasing the spectral efficiency and network capacity
标签： Full-Duplex Cells Small
上传时间： 2020-05-27
上传用户：shancjb
GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.
标签： GaN-on-Si Displace and SiC Si
上传时间： 2020-06-07
上传用户：shancjb
