主要介绍了phone GAP 月jquery 相结合的至少
标签： phoneGAP
上传时间： 2015-05-30
上传用户：hanyuchenxi
/****************temic*********t5557***********************************/ #include <at892051.h> #include <string.h> #include <intrins.h> #include <stdio.h> #define uchar unsigned char #define uint unsigned int #define ulong unsigned long //STC12C2051AD的SFR定义 sfr WDT_CONTR = 0xe1;//stc2051的看门狗?????? /**********全局常量************/ //写卡的命令 #define write_command0 0//写密码 #define write_command1 1//写配置字 #define write_command2 2//密码写数据 #define write_command3 3//唤醒 #define write_command4 4//停止命令 #define TRUE 1 #define FALSE 0 #define OK 0 #define ERROR 255 //读卡的时间参数us #define ts_min 250//270*11.0592/12=249//取近似的整数 #define ts_max 304//330*11.0592/12=304 #define t1_min 73//90*11.0592/12=83:-10调整 #define t1_max 156//180*11.0592/12=166 #define t2_min 184//210*11.0592/12=194 #define t2_max 267//300*11.0592/12=276 //***********不采用中断处理:采用查询的方法读卡时关所有中断****************/ sbit p_U2270B_Standby = P3^5;//p_U2270B_Standby PIN=13 sbit p_U2270B_CFE = P3^3;//p_U2270B_CFE PIN=6 sbit p_U2270B_OutPut = P3^7;//p_U2270B_OutPut PIN=2 sbit wtd_sck = P1^7;//SPI总线 sbit wtd_si = P1^3; sbit wtd_so = P1^2; sbit iic_data = P1^2;//lcd IIC sbit iic_clk = P1^7; sbit led_light = P1^6;//测试绿灯 sbit led_light1 = P1^5;//测试红灯 sbit led_light_ok = P1^1;//读卡成功标志 sbit fengmingqi = P1^5; /***********全局变量************************************/ uchar data Nkey_a[4] = {0xA0, 0xA1, 0xA2, 0xA3};//初始密码 //uchar idata card_snr[4]; //配置字 uchar data bankdata[28] = {1,2,3,4,5,6,7,1,2,3,4,5,6,7,1,2,3,4,5,6,7,1,2,3,4,5,6,7}; //存储卡上用户数据(1-7)7*4=28 uchar data cominceptbuff[6] = {1,2,3,4,5,6};//串口接收数组ram uchar command; //第一个命令 uchar command1;// //uint temp; uchar j,i; uchar myaddr = 8; //uchar ywqz_count,time_count; //ywqz jishu: uchar bdata DATA; sbit BIT0 = DATA^0; sbit BIT1 = DATA^1; sbit BIT2 = DATA^2; sbit BIT3 = DATA^3; sbit BIT4 = DATA^4; sbit BIT5 = DATA^5; sbit BIT6 = DATA^6; sbit BIT7 = DATA^7; uchar bdata DATA1; sbit BIT10 = DATA1^0; sbit BIT11 = DATA1^1; sbit BIT12 = DATA1^2; sbit BIT13 = DATA1^3; sbit BIT14 = DATA1^4; sbit BIT15 = DATA1^5; sbit BIT16 = DATA1^6; sbit BIT17 = DATA1^7; bit i_CurrentLevel;//i_CurrentLevel BIT 00H(Saves current level of OutPut pin of U2270B) bit timer1_end; bit read_ok = 0; //缓存定时值,因用同一个定时器 union HLint { uint W; struct { uchar H;uchar L; } B; };//union HLint idata a union HLint data a; //缓存定时值,因用同一个定时器 union HLint0 { uint W; struct { uchar H; uchar L; } B; };//union HLint idata a union HLint0 data b; /**********************函数原型*****************/ //读写操作 void f_readcard(void);//全部读出1~7 AOR唤醒 void f_writecard(uchar x);//根据命令写不同的内容和操作 void f_clearpassword(void);//清除密码 void f_changepassword(void);//修改密码 //功能子函数 void write_password(uchar data *data p);//写初始密码或数据 void write_block(uchar x,uchar data *data p);//不能用通用指针 void write_bit(bit x);//写位 /*子函数区*****************************************************/ void delay_2(uint x) //延时,时间x*10us@12mhz,最小20us@12mhz { x--; x--; while(x) { _nop_(); _nop_(); x--; } _nop_();//WDT_CONTR=0X3C;不能频繁的复位 _nop_(); } ///////////////////////////////////////////////////////////////////// void initial(void) { SCON = 0x50; //串口方式1,允许接收 //SCON =0x50; //01010000B:10位异步收发,波特率可变,SM2=0不用接收到有效停止位才RI=1, //REN=1允许接收 TMOD = 0x21; //定时器1 定时方式2(8位),定时器0 定时方式1(16位) TCON = 0x40; //设定时器1 允许开始计时(IT1=1) TH1 = 0xfD; //FB 18.432MHz 9600 波特率 TL1 = 0xfD; //fd 11.0592 9600 IE = 0X90; //EA=ES=1 TR1 = 1; //启动定时器 WDT_CONTR = 0x3c;//使能看门狗 p_U2270B_Standby = 0;//单电源 PCON = 0x00; IP = 0x10;//uart you xian XXXPS PT1 PX1 PT0 PX0 led_light1 = 1; led_light = 0; p_U2270B_OutPut = 1; } /************************************************/ void f_readcard()//读卡 { EA = 0;//全关,防止影响跳变的定时器计时 WDT_CONTR = 0X3C;//喂狗 p_U2270B_CFE = 1;// delay_2(232); //>2.5ms /* // aor 用唤醒功能来防碰撞 p_U2270B_CFE = 0; delay_2(18);//start GAP>150us write_bit(1);//10=操作码读0页 write_bit(0); write_password(&bankdata[24]);//密码block7 p_U2270B_CFE =1 ;// delay_2(516);//编程及确认时间5.6ms */ WDT_CONTR = 0X3C;//喂狗 led_light = 0; b.W = 0; while(!(read_ok == 1)) { //while(p_U2270B_OutPut);//等一个稳定的低电平?超时判断? while(!p_U2270B_OutPut);//等待上升沿的到来同步信号检测1 TR0 = 1; //deng xia jiang while(p_U2270B_OutPut);//等待下降沿 TR0 = 0; a.B.H = TH0; a.B.L = TL0; TH0 = TL0 = 0; TR0 = 1;//定时器晚启动10个周期 //同步头 if((324 < a.W) && (a.W < 353)) ;//检测同步信号1 else { TR0 = 0; TH0 = TL0 = 0; goto read_error; } //等待上升沿 while(!p_U2270B_OutPut); TR0 = 0; a.B.H = TH0; a.B.L = TL0; TH0 = TL0 = 0; TR0 = 1;//b.N1<<=8; if(a.B.L < 195);//0.5p else { TR0 = 0; TH0 = TL0 = 0; goto read_error; } //读0~7块的数据 for(j = 0;j < 28;j++) { //uchar i; for(i = 0;i < 16;i++)//8个位 { //等待下降沿的到来 while(p_U2270B_OutPut); TR0 = 0; a.B.H = TH0; a.B.L = TL0; TH0 = TL0 = 0; TR0 = 1; if(t2_max < a.W/*)&&(a.W < t2_max)*/)//1P { b.W >>= 2;//先左移再赋值 b.B.L += 0xc0; i++; } else if(t1_min < a.B.L/*)&&(a.B.L < t1_max)*/)//0.5p { b.W >>= 1; b.B.L += 0x80; } else { TR0 = 0; TH0 = TL0 = 0; goto read_error; } i++; while(!p_U2270B_OutPut);//上升 TR0 = 0; a.B.H = TH0; a.B.L = TL0; TH0 = TL0 = 0; TR0 = 1; if(t2_min < a.W/*)&&(a.W < t2_max)*/)//1P { b.W >>= 2; i++; } else if(t1_min < a.B.L/*a.W)&&(a.B.L < t1_max)*/)//0.5P //else if(!(a.W==0)) { b.W >>= 1; //temp+=0x00; //led_light1=0;led_light=1;delay_2(40000); } else { TR0 = 0; TH0 = TL0 = 0; goto read_error; } i++; } //取出奇位 DATA = b.B.L; BIT13 = BIT7; BIT12 = BIT5; BIT11 = BIT3; BIT10 = BIT1; DATA = b.B.H; BIT17 = BIT7; BIT16 = BIT5; BIT15 = BIT3; BIT14 = BIT1; bankdata[j] = DATA1; } read_ok = 1;//读卡完成了 read_error: _nop_(); } } /***************************************************/ void f_writecard(uchar x)//写卡 { p_U2270B_CFE = 1; delay_2(232); //>2.5ms //psw=0 standard write if (x == write_command0)//写密码:初始化密码 { uchar i; uchar data *data p; p = cominceptbuff; p_U2270B_CFE = 0; delay_2(31);//start GAP>330us write_bit(1);//写操作码1:10 write_bit(0);//写操作码0 write_bit(0);//写锁定位0 for(i = 0;i < 35;i++) { write_bit(1);//写数据位1 } p_U2270B_CFE = 1; led_light1 = 0; led_light = 1; delay_2(40000);//测试使用 //write_block(cominceptbuff[4],p); p_U2270B_CFE = 1; bankdata[20] = cominceptbuff[0];//密码存入 bankdata[21] = cominceptbuff[1]; bankdata[22] = cominceptbuff[2]; bankdata[23] = cominceptbuff[3]; } else if (x == write_command1)//配置卡参数:初始化 { uchar data *data p; p = cominceptbuff; write_bit(1);//写操作码1:10 write_bit(0);//写操作码0 write_bit(0);//写锁定位0 write_block(cominceptbuff[4],p); p_U2270B_CFE= 1; } //psw=1 pssword mode else if(x == write_command2) //密码写数据 { uchar data*data p; p = &bankdata[24]; write_bit(1);//写操作码1:10 write_bit(0);//写操作码0 write_password(p);//发口令 write_bit(0);//写锁定位0 p = cominceptbuff; write_block(cominceptbuff[4],p);//写数据 } else if(x == write_command3)//aor //唤醒 { //cominceptbuff[1]操作码10 X xxxxxB uchar data *data p; p = cominceptbuff; write_bit(1);//10 write_bit(0); write_password(p);//密码 p_U2270B_CFE = 1;//此时数据不停的循环传出 } else //停止操作码 { write_bit(1);//11 write_bit(1); p_U2270B_CFE = 1; } p_U2270B_CFE = 1; delay_2(560);//5.6ms } /************************************/ void f_clearpassword()//清除密码 { uchar data *data p; uchar i,x; p = &bankdata[24];//原密码 p_U2270B_CFE = 0; delay_2(18);//start GAP>150us //操作码10:10xxxxxxB write_bit(1); write_bit(0); for(x = 0;x < 4;x++)//发原密码 { DATA = *(p++); for(i = 0;i < 8;i++) { write_bit(BIT0); DATA >>= 1; } } write_bit(0);//锁定位0:0 p = &cominceptbuff[0]; write_block(0x00,p);//写新配置参数:pwd=0 //密码无效:即清除密码 DATA = 0x00;//停止操作码00000000B for(i = 0;i < 2;i++) { write_bit(BIT7); DATA <<= 1; } p_U2270B_CFE = 1; delay_2(560);//5.6ms } /*********************************/ void f_changepassword()//修改密码 { uchar data *data p; uchar i,x,addr; addr = 0x07;//block7 p = &Nkey_a[0];//原密码 DATA = 0x80;//操作码10:10xxxxxxB for(i = 0;i < 2;i++) { write_bit(BIT7); DATA <<= 1; } for(x = 0;x < 4;x++)//发原密码 { DATA = *(p++); for(i = 0;i < 8;i++) { write_bit(BIT7); DATA >>= 1; } } write_bit(0);//锁定位0:0 p = &cominceptbuff[0]; write_block(0x07,p);//写新密码 p_U2270B_CFE = 1; bankdata[24] = cominceptbuff[0];//密码存入 bankdata[25] = cominceptbuff[1]; bankdata[26] = cominceptbuff[2]; bankdata[27] = cominceptbuff[3]; DATA = 0x00;//停止操作码00000000B for(i = 0;i < 2;i++) { write_bit(BIT7); DATA <<= 1; } p_U2270B_CFE = 1; delay_2(560);//5.6ms } /***************************子函数***********************************/ void write_bit(bit x)//写一位 { if(x) { p_U2270B_CFE = 1; delay_2(32);//448*11.0592/120=42延时448us p_U2270B_CFE = 0; delay_2(28);//280*11.0592/120=26写1 } else { p_U2270B_CFE = 1; delay_2(92);//192*11.0592/120=18 p_U2270B_CFE = 0; delay_2(28);//280*11.0592/120=26写0 } } /*******************写一个block*******************/ void write_block(uchar addr,uchar data *data p) { uchar i,j; for(i = 0;i < 4;i++)//block0数据 { DATA = *(p++); for(j = 0;j < 8;j++) { write_bit(BIT0); DATA >>= 1; } } DATA = addr <<= 5;//0地址 for(i = 0;i < 3;i++) { write_bit(BIT7); DATA <<= 1; } } /*************************************************/ void write_password(uchar data *data p) { uchar i,j; for(i = 0;i < 4;i++)// { DATA = *(p++); for(j = 0;j < 8;j++) { write_bit(BIT0); DATA >>= 1; } } } /*************************************************/ void main() { initial(); TI = RI = 0; ES = 1; EA = 1; delay_2(28); //f_readcard(); while(1) { f_readcard(); //读卡 f_writecard(command1); //写卡 f_clearpassword(); //清除密码 f_changepassword(); //修改密码 } }
标签： 12345
上传时间： 2017-10-20
上传用户：my_lcs
Theartofcomputationofelectromagnetic(EM)problemshasgrownexponentially for three decades due to the availability of powerful computer resources. In spite of this, the EM community has suffered without a suitable text on the computational techniques commonly used in solving EM-related problems. Although there have been monographs on one particular technique or another, the monographs are written for the experts rather than students. Only a few texts cover the major techniques and dothatinamannersuitableforclassroomuse.Itseemsexpertsinthisareaarefamiliar with one or a few techniques but not many seem to be familiar with all the common techniques. This text attempts to fill that GAP.
标签： Electromagnetics Techniques Numerical in
上传时间： 2020-05-31
上传用户：shancjb
The mature CMOS fabrication processes are available in many IC foundries. It is cost-effective to leverage the existing CMOS fabrication technologies to implement MEMS devices. On the other hand, the MEMS devices could also add values to the IC industry as the Moore’s law reaching its limit. The CMOS MEMS could play a key role to bridge the GAP between the CMOS and MEMS technologies. The CMOS MEMS also offers the advantage of monolithic integration of ICs and micro mechanical components.
标签： TECHNOLOGY CMOS MEMS KEY
上传时间： 2020-06-06
上传用户：shancjb
GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy GAP, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.
标签： GaN-on-Si Displace and SiC Si
上传时间： 2020-06-07
上传用户：shancjb
