Recently a new technology for high voltage Power MOSFETshas been introduced – the CoolMOS™ . Based on thenew device concept of charge compensation the RDS(on) areaproduct for e.g. 600V transistors has been reduced by afactor of 5. The devices show no bipolar current contributionlike the well known tail current observed during the turn-offphase of IGBTs. CoolMOS™ virtually combines the lowswitching losses of a MOSFET with the on-state losses of anIGBT.
