虫虫首页| 资源下载| 资源专辑| 精品软件
登录| 注册

您现在的位置是:虫虫下载站 > 资源下载 > 技术资料 > IGBT图解

IGBT图解

  • 资源大小:9541 K
  • 上传时间: 2022-06-20
  • 上传用户:wangshoupeng199
  • 资源积分:2 下载积分
  • 标      签: igbt

资 源 简 介

le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2

ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)

p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)

le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2

Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)

Turn-On

1. Inversion layer is formed when Vge>Vth

2. Apply positive collector bias, +Vce

3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor

4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).

5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation)

. Turn-Off

1. Remove gate bias (discharge gate)

2. Cut off electron current (base current, le, of pnp transistor)


相 关 资 源

您 可 能 感 兴 趣 的